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SEMICONDUCTOR BC328
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
High Current : IC=-800mA.
A
DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA).
For Complementary with NPN type BC338. N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
MAXIMUM RATING (Ta=25 ) G 0.85
H 0.45
H J _
14.00 + 0.50
CHARACTERISTIC SYMBOL RATING UNIT
F F K 0.55 MAX
L 2.30
Collector-Base Voltage VCBO -30 V M 0.45 MAX
N 1.00
Collector-Emitter Voltage VCEO -25 V
C
1 2 3
L
M
Emitter-Base Voltage VEBO -5 V 1. COLLECTOR
2. BASE
Collector Current IC -800 mA 3. EMITTER
Emitter Current IE 800 mA
Collector Power Dissipation PC 625 mW TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-25V, IE=0 - - -100 nA
DC Current Gain (Note) hFE VCE=-1V, IC=-100mA 100 - 630
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V
Base-Emitter Voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V
Transition Frequency fT VCE=-5V, IC=-10mA, f=100MHz - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 16 - pF
Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630
2000. 2. 28 Revision No : 2 1/2
BC328
2000. 2. 28 Revision No : 2 2/2
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