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SEMICONDUCTOR BC337
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
High Current : IC=800mA.
A
DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA).
For Complementary with PNP type BC327. N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
MAXIMUM RATING (Ta=25 ) G 0.85
H 0.45
H J _
14.00 + 0.50
CHARACTERISTIC SYMBOL RATING UNIT
F F K 0.55 MAX
L 2.30
Collector-Base Voltage VCBO 50 V M 0.45 MAX
N 1.00
Collector-Emitter Voltage VCEO 45 V
C
1 2 3
L
M
Emitter-Base Voltage VEBO 5 V 1. COLLECTOR
2. BASE
Collector Current IC 800 mA 3. EMITTER
Emitter Current IE -800 mA
Collector Power Dissipation PC 625 mW TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=45V, IE=0 - - 100 nA
DC Current Gain (Note) hFE VCE=1V, IC=100mA 100 - 630
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V
Base-Emitter Voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V
Transition Frequency fT VCE=5V, IC=10mA, f=100MHz - 100 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 16 - pF
Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630
2000. 2. 28 Revision No : 2 1/2
BC337
2000. 2. 28 Revision No : 2 2/2
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