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SEMICONDUCTOR BC516
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
B C
A
N DIM MILLIMETERS
E A 4.70 MAX
K
MAXIMUM RATING (Ta=25 ) G B 4.80 MAX
D C 3.70 MAX
J
CHARACTERISTIC SYMBOL RATING UNIT D 0.45
E 1.00
VCBO F 1.27
Collector-Base Voltage -40 V
G 0.85
H 0.45
Collector-Emitter Voltage VCEO -30 V H J _
14.00 + 0.50
F F K 0.55 MAX
Emitter-Base Voltage VEBO -10 V L 2.30
M 0.45 MAX
Collector Current IC -500 mA N 1.00
C
1 2 3
L
M
Collector Power Dissipation PC 625 mW
1. COLLECTOR
Junction Temperature Tj 150 2. BASE
3. EMITTER
Storage Temperature Tstg -55 150
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=-0.1mA, IE=0 -40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1.0mA, IC=0 -10 - - V
Collector Cut-off Current ICBO VCB=-40V, IE=0 - - -1.0 A
Emitter Cut-off Current IEBO VEB=-10V, IC=0 - - -1.0 A
DC Current Gain hFE IC=-100mA, VCE=-2V 30k - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-1mA - - -1.0 V
Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-1mA - -1.5 -2.0 V
Current Gain Bandwidth Product fT IC=-100mA, VCE=-2V, f=100MHz - 220 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 5.0 - pF
2002. 11. 13 Revision No : 0 1/1
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