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SEMICONDUCTOR BC517
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
B C
A
N DIM MILLIMETERS
E A 4.70 MAX
K
MAXIMUM RATING (Ta=25 ) G B 4.80 MAX
D C 3.70 MAX
CHARACTERISTIC SYMBOL RATING UNIT
J
D 0.45
E 1.00
VCBO F 1.27
Collector-Base Voltage 40 V
G 0.85
H 0.45
Collector-Emitter Voltage VCEO 30 V H J _
14.00 + 0.50
F F K 0.55 MAX
Emitter-Base Voltage VEBO 10 V L 2.30
M 0.45 MAX
Collector Current IC 500 mA N 1.00
C
1 2 3
L
M
Collector Power Dissipation PC 625 mW
1. COLLECTOR
Junction Temperature Tj 150 2. BASE
3. EMITTER
Storage Temperature Tstg -55 150
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 40 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1.0mA, IC=0 10 - - V
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1.0 A
Emitter Cut-off Current IEBO VEB=10V, IC=0 - - 1.0 A
DC Current Gain hFE IC=100mA, VCE=2V 30k - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=1mA - - 1.0 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=1mA - 1.5 2.0 V
Current Gain Bandwidth Product fT IC=100mA, VCE=2V, f=100MHz - 220 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 5.0 - pF
1999. 11. 30 Revision No : 1 1/2
BC517
h FE - I C I C - V CE(sat)
6 3
10 10
COLLECTOR CURRENT I C (mA)
DC CURRENT GAIN h FE
Ta=125 C
5 2
10 10
Ta=25 C
C
C
55 C
25
25
Ta=-55 C
Ta=
=1
Ta=-
Ta
4 1
10 10
3 0
10 -1 0 1 2 3
10
10 10 10 10 10 0 0.2 0.4 0.6 0.8 1.0 1.2
COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION
VOLTAGE V CE(sat) (V)
P C - Ta I C - VBE
3
700 10
COLLECTOR POWER DISSIPATION
COLLECTOR CURRENT I C (mA)
625
500 2
10
P C (mW)
400
300
1
10
200
100
0
0 10
0 25 50 75 100 125 150 175 0.8 1.0 1.2 1.4 1.6 1.8
AMBIENT TEMPERATURE Ta ( C) BASE-EMITTER VOLTAGE V BE (V)
1999. 11. 30 Revision No : 1 2/2
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