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SEMICONDUCTOR BC546/7/8
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
B C
FEATURES
A
High Voltage : BC546 VCEO=65V.
For Complementary With PNP Type BC556/557/558. N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
MAXIMUM RATING (Ta=25 ) G 0.85
H 0.45
H J _
14.00 + 0.50
CHARACTERISTIC SYMBOL RATING UNIT
F F K 0.55 MAX
L 2.30
BC546 80 M 0.45 MAX
Collector-Base N 1.00
VCBO
C
BC547 50 V 1 2 3
L
Voltage
M
BC548 30 1. COLLECTOR
2. BASE
BC546 65 3. EMITTER
Collector-Emitter
BC547 VCEO 45 V
Voltage
BC548 30 TO-92
BC546 6
Emitter-Base
BC547 VEBO 6 V
Voltage
BC548 5
BC546 100
Collector Current BC547 IC 100 mA
BC548 100
BC546 20
Base Current BC547 IB 20 mA
BC548 20
BC546 -100
Emitter Current BC547 IE -100 mA
BC548 -100
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2008. 4. 16 Revision No : 4 1/3
BC546/7/8
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 15 nA
BC546 110 - 450
DC Current Gain (Note) BC547 hFE VCE=5V, IC=2mA 110 - 800
BC548 110 - 800
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=5mA - - 0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=5mA - 0.9 1.1 V
VBE(ON)1 VCE=5V, IC=2mA 0.58 - 0.7 V
Base-Emitter Voltage
VBE(ON)2 VCE=5V, IC=10mA - - 0.75 V
Transition Frequency fT VCE=5V, IC=10mA, f=100MHz - 150 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - - 4.5 pF
VCE=6V, IC=0.1mA
Noise Figure NF - 1.0 10 dB
Rg=10k , f=1kHz
NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows.
CLASSIFICATION none A B C
BC546 110 450 110 220 200 450 -
hFE BC547 110 800 110 220 200 450 420 800
BC548 110 800 110 220 200 450 420 800
2008. 4. 16 Revision No : 4 2/3
BC546/7/8
2008. 4. 16 Revision No : 4 3/3
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