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SEMICONDUCTOR BC559/560
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
LOW NOISE APPLICATION.
FEATURE B C
For Complementary with NPN Type BC549/550.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
MAXIMUM RATING (Ta=25 ) C 3.70 MAX
D
J
D 0.45
CHARACTERISTIC SYMBOL RATING UNIT E 1.00
F 1.27
BC559 -30 G 0.85
Collector-Base Voltage VCBO V H 0.45
BC560 -50 H J _
14.00 + 0.50
F F K 0.55 MAX
BC559 -30 L 2.30
Collector-Emitter Voltage VCEO V M 0.45 MAX
BC560 -45 N 1.00
C
1 2 3
L
M
Emitter-Base Voltage VEBO -5 V 1. COLLECTOR
2. BASE
Collector Current IC -100 mA
3. EMITTER
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
TO-92
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter BC559 -30 - -
V(BR)CEO IC=-10mA, IB=0 V
Breakdown Voltage BC560 -45 - -
Collector-Base BC559 -30 - -
V(BR)CBO IC=-10 A, IE=0 V
Breakdown Voltage BC560 -50 - -
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5.0 - - V
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -15 nA
DC Current Gain hFE IC=-2mA, VCE=-5V 110 - 800
Base-Emitter Voltage VBE(ON) IC=-2mA, VCE=-5V -0.55 - -0.7 V
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-5mA - - -0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-5mA - -0.9 - V
Transition Frequency fT IC=-10mA, VCE=-5V, f=100MHz - 300 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 7.0 pF
IC=-200 A, VCE=-5V
Noise Figure NF - - 4.0 dB
Rg=10k , f=1kHz
Note : hFE Classification A:110 220, B:200 450, C:420 800
1999. 11. 30 Revision No : 2 1/1
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