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SEMICONDUCTOR BC637
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT TRANSISTORS.
B C
FEATURES
Complementary to BC638.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
MAXIMUM RATING (Ta=25 )
J
D 0.45
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT F 1.27
G 0.85
Collector-Base Voltage VCBO 60 V H 0.45
H J _
14.00 + 0.50
Collector-Emitter Voltage VCEO 60 V F F K 0.55 MAX
L 2.30
M 0.45 MAX
Emitter-Base Voltage VEBO 5 V
N 1.00
C
1 2 3
L
Collector Current IC 500 mA
M
1. EMITTER
Collector Power Dissipation PC 625 mW 2. COLLECTOR
3. BASE
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 100 nA
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=10mA, IB=0 60 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 60 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5.0 - - V
DC Current Gain hFE VCE=2V, IC=150mA 40 - 160
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.5 V
Base-Emitter Voltage VBE VCE=2V, IC=500mA - - 1.0 V
Transition Frequency fT VCE=2V, IC=50mA, f=100MHz - 200 - MHz
Input Capacitance Cib VEB=0.5V, IC=0, f=1MHz - 50 - pF
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 7.0 - pF
* Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
2000. 10. 2 Revision No : 0 1/1
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