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SEMICONDUCTOR BC817
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Complementary to BC807. A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 0.45+0.15/-0.05
D
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05
K 0.00 ~ 0.10
CHARACTERISTIC SYMBOL RATING UNIT L 0.55
P P
M 0.20 MIN
Collector-Base Voltage VCBO 50 V N 1.00+0.20/-0.10
N
P 7
C
J
Collector-Emitter Voltage VCEO 45 V
M
K
Emitter-Base Voltage VEBO 5 V
Collector Current IC 800 mA 1. EMITTER
2. BASE
Emitter Current IE -800 mA
3. COLLECTOR
Collector Power Dissipation PC* 350 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 SOT-23
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
hFE(1) VCE=1V, IC=100mA 100 - 630
DC Current Gain (Note)
hFE(2) VCE=1V, IC=500mA 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V
Base-Emitter Voltage VBE VCE=1V, IC=500mA - - 1.2 V
Transition Frequency fT VCE=5V, IC=10mA, f=100MHz 100 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 5 - pF
Note : hFE(1) Classification 16:100 250 , 25:160 400 , 40:250 630
Marking
MARK SPEC Lot No.
TYPE BC817-16 BC817-25 BC817-40
Type Name
MARK 6A 6B 6C
2009. 2. 19 Revision No : 5 1/2
BC817
h FE - I C I C - VCE
1000 800
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT IC (mA)
500 VCE =1V Ta=25 C
8
DC CURRENT GAIN h FE
300 600 7
Ta=100 C
6
5
Ta=25 C 4
100 400
3
50 Ta=-25 C
2
30 200
I B =1mA
0
10 0
10 30 100 300 1000 0 1 2 3 4 5 6
COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE V CE (V)
VCE(sat) - I C I C - V BE
COLLECTOR-EMITTER SATURATION
3 1000
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
I C /IB =25 VCE =1V
300
VOLTAGE VCE(sat) (V)
1
100
0.3
C
25 C
C
100
C 30
100
25
Ta= Ta=
Ta=-
Ta=
0.1 Ta=25 C
10
0.03 Ta=100 C Ta=-25 C
3
0.01 1
10 30 100 300 1000 0.2 0.4 0.6 0.8 1.0
COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)
fT - I C P C - Ta
500 500
COLLECTOR POWER DISSIPATION
COMMON EMITTER
300
TRANSITION FREQUENCY
VCE =5V Ta=25 C
400
f T (MHz)
P C (mW)
100 300
200
30
100
10 0
1 3 10 30 100 300 1000
0 25 50 75 100 125 150 175
COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)
2009. 2. 19 Revision No : 5 2/2
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