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SEMICONDUCTOR BC817W
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES E
M B M
Complementary to BC807W.
DIM MILLIMETERS
A _
2.00 + 0.20
D
2 B _
1.25 + 0.15
A
_
J
C 0.90 + 0.10
1 3
G
D 0.3+0.10/-0.05
E _
2.10 + 0.20
MAXIMUM RATING (Ta=25 ) G 0.65
H 0.15+0.1/-0.06
CHARACTERISTIC SYMBOL RATING UNIT J 1.30
K 0.00~0.10
Collector-Base Voltage VCBO 50 V L 0.70
C
H
L
M 0.42
Collector-Emitter Voltage VCEO 45 V N 0.10 MIN
N N
K
Emitter-Base Voltage VEBO 5 V
Collector Current IC 500 mA 1. EMITTER
Emitter Current IE -500 mA 2. BASE
3. COLLECTOR
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 USM
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
hFE(1) VCE=1V, IC=100mA 100 - 630
DC Current Gain (Note)
hFE(2) VCE=1V, IC=500mA 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.7 V
Base-Emitter Voltage VBE VCE=1V, IC=500mA - - 1.2 V
Transition Frequency fT VCE=5V, IC=10mA, f=100MHz 100 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 5 - pF
Note : hFE(1) Classification 16:100 250 , 25:160 400 , 40:250 630
Marking
MARK SPEC Lot No.
TYPE BC817W-16 BC817W-25 BC817W-40
Type Name
MARK 2M 2N 2R
2008. 9. 2 Revision No : 0 1/2
BC817W
h FE - I C I C - VCE (LOW VOLTAGE REGION)
1000 800
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT IC (mA)
Ta=25 C
500 VCE =1V
DC CURRENT GAIN h FE
300 600
Ta=100 C
5 4
Ta=25 C 3
100 400
2
50 Ta=-25 C
30 200 I B =1mA
0
10 0
10 30 100 300 1000 0 1 2 3 4 5 6
COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE V CE (V)
VCE(sat) - I C I C - V BE
COLLECTOR-EMITTER SATURATION
3 1000
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
I C /IB =25 VCE =1V
300
VOLTAGE VCE(sat) (V)
1
100
0.3
C
25 C
C
100
C 30
100
25
Ta= Ta=
Ta=-
Ta=
0.1 Ta=25 C
10
0.03 Ta=100 C
Ta=-25 C 3
0.01 1
10 30 100 300 1000 0.2 0.4 0.6 0.8 1.0
COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)
fT - I C P C - Ta
500 300
COLLECTOR POWER DISSIPATION
COMMON EMITTER
300
TRANSITION FREQUENCY
VCE =5V Ta=25 C
200
f T (MHz)
P C (mW)
100
30 100
10 0
1 3 10 30 100 300 1000
0 25 50 75 100 125 150 175
COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)
2008. 9. 2 Revision No : 0 2/2
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