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SEMICONDUCTOR BF422
TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATIONS.
B C
FEATURES
High Voltage : VCEO>250V
A
Complementary to BF423.
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
MAXIMUM RATING (Ta=25 ) F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT H 0.45
H J _
14.00 + 0.50
Collector-Base Voltage VCBO 250 V F F K 0.55 MAX
L 2.30
Collector-Emitter Voltage VCEO 250 V M 0.45 MAX
N 1.00
C
VEBO 1 2 3
Emitter-Base Voltage 5 V
L
M
DC IC 50 1. EMITTER
2. COLLECTOR
Collector Current mA
ICP 3. BASE
Peak 100
Collector Power Dissipation PC 625 mW
Base Current IB 50 mA TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -65 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VCB=200V, IE=0 - - 10 nA
Collector Cut-off Current ICBO
VCB=200V, IE=0, Tj=150 - - 10 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 50 nA
DC Current Gain hFE VCE=20V, IC=25mA 50 - - -
Collector-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=5mA - - 0.6 V
Base-Emitter Voltage VBE VCE=-20V, IC=25mA - 0.75 - V
Transition Frequency fT VCE=10V, IC=10mA 60 - - MHz
Reverse Transfer Capacitance Cre VCB=30V, IE=0, f=1MHz - - 1.6 pF
1998. 10. 31 Revision No : 2 1/3
BF422
IC - VCE (LOW VOLTAGE REGION) hFE - IC
60 500
COLLECTOR CURRENT IC (mA)
COMMON EMITTER COMMON EMITTER
1.6 Ta=25 C 300 Ta=25 C
DC CURRENT GAIN hFE
50 1.2
0.8
0.6 VCE =20V
40 100
0.4
30 0.3 50
10
0.2 30
20 5
0.15
0.1
10 I B =0.05mA 10
0
0 0
0 4 8 12 16 20 24 28 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
500 2
COMMON EMITTER COMMON EMITTER
300 VCE =10V 1 Ta=25 C
DC CURRENT GAIN hFE
VOLTAGE ,VCE(sat) (V)
Ta=100 C 0.5
Ta=25 C
100 0.3
Ta=-25 C
50 I C /I B =10
30 0.1
5
0.05
0.03 2
10
0 0.01
0.3 1 3 10 30 100 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
VCE(sat) - IC IC - VBE
COLLECTOR-EMITTER SATURATION
2
COLLECTOR CURRENT IC (mA)
50
COMMON EMITTER COMMON EMITTER
1 I C /IB =5 VCE =10V
VOLTAGE VCE(sat) (V)
40
0.5
0.3
30
C
00 C
Ta=-25 C
Ta=100 C
Ta=25
0.1
Ta=1
20
0.05
Ta=25 C
Ta=-25 C 10
0.01 0
0.3 1 3 10 30 100 0 0.2 0.4 0.6 0.8 1.0 1.2
COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V)
1998. 10. 31 Revision No : 2 2/3
BF422
Cob, Cre - VCB fT - IC
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
REVERSE TRANSFER CAPACITANCE Cre (pF)
TRANSITION FREQUENCY fT (MHz)
10 500
I E =0
COMMON EMITTER
f=1MHz 300 Ta=25 C
8 Ta=25 C
VCE =20V
6 100
4 50
C ob
30
VCE =10V
2
C re
0 10
0 40 80 120 160 200 240 280 0.3 1 3 10 30
COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT IC (mA)
PC - Ta SAFE OPERATING AREA
COLLECTOR POWER DISSIPATION
1000 200
I C MAX.(PULSED) *
100
COLLECTOR CURRENT IC (mA)
1m
800 1
10 0ms
s
I C MAX.(CONTINUOUS) 0m *
50 s *
30 DC *
PC (mW)
600 OP
ER
AT
IO
400 N
10
5
200
3 * SINGLE NONREPETITIVE
PULSE Ta=25 C
0 CURVES MUST BE DERATED
0 40 80 120 160 200 LINEARLY WITH INCREASE
1 IN TEMPERATURE.
0.5
AMBIENT TEMPERATURE Ta ( C) 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
1998. 10. 31 Revision No : 2 3/3
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