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SEMICONDUCTOR GM200HB12CT
TECHNICAL DATA
1200V/200A 2 IN ONE PACKAGE
FEATURES
TENTATIVE
IGBT New Technology Unit : mm
OUTLINE DRAWING
Low VCE(sat)
Low Turn-off losses _
_
108.5 + 0.2
6.5 + 0.2
_
28 + 0.2 _
28 + 0.2
Short tail current
Positive temperature coefficient
G2
62.5 + 0.2
27 + 0.2
15 + 0.2
E2
APPLICATION
_
_
_
E1
AC & DC Motor controls G1
General purpose inverters M6
Optimized for high current inverter _
93 +0.2
Servo Controls _
108.5 + 0.2
UPS, Robotics
_
18 + 0.2 _
18 + 0.2 _
18 + 0.2
_
14 + 0.2 _
14 + 0.2 _
14 + 0.2 _
1.3 + 0.2
30.45 + 0.2
31.6 + 0.2
_
_
G2
E2
C2E1 C1
E2
E1
G1
Internal Circuit
MAXIMUM RATING (@Ta=25 Per Leg)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-to-Emitter Voltage @TC=25 VCES 1200 V
Gate-Emitter Voltage VGES 20 V
@TC=25 260
Continuous Collector Current IC A
@TC=80 200
Pulsed Collector Current @TC=25 ICP 400 A
@TC=25 260
Diode Continuous Forward Current IF A
@TC=80 200
Diode Maximum Forward Current @TC=25 IFM 400 A
@TC=25 10
Short Circuit Test tP
@TC=125 8
Isolation Voltage test AC @ 1 minute Viso 2500 V
Junction Temperature Tj -40 ~ 150
Storage Temperature Tstg -40 ~ 125
Weight of Module Weight 360 g
Mounting Torque with screw : M6 4.0 N.m
Md
Terminal Connection torque : M6 4.0 N.m
2009. 6. 19 Revision No : 0 1/3
GM200HB12CT
STATIC CHARACTERISTICS (@Tj=25 Unless otherwise specified)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-to-Emitter Saturation Volatge VCE(ON) IC =200A, VGE=15V 1.4 1.7 2.1
V
Gate Threshold Voltage VGE(th) IC =8mA, VCE=VGE 5.0 5.8 6.5
Zero Gate Voltage Collector Current ICES VGE=0V, VCE=1200V - - 5.0 mA
Gate-to-Emitter Leakage Volatge IGES VCE=0V, VCE=20V - - 400 nA
Diode Forward Voltage Drop VFM IF =200A, VGE=0V 1.2 1.6 1.9 V
Integrated gate resistor RGINT - 3.8 -
ELECTRICAL CHARACTERISTICS (IGBT/DIODE)(@Ta=25 Unless otherwise specified)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
IGBT
Input Capacitance Cies - 14420 -
Ouput Capacitance Coes VCE=25V, VGE=0V, f=1MHz - 760 - nF
Reverse Transfer Capacitance Cres - 660 -
Turn-On Delay Time td(on) - 290 -
Inductive Switching 125
Rise Time tr - 50 -
VCC=600V, IC=200A, ns
Turn-Off Delay Time td(off) - 520 -
VGE= 15V,RG=3.9
Fall Time tr - 90 -
DIODE
Maximum Peak Repetitive Reverse Voltage VRRM 1200 - - V
Maximum Reverse Ieakage current IRM VR=1200V - - 350
Reverse Recovery Time trr - 170 - ns
IF=200A, VR=600V, di/dt=2500A/
Reverse Recovery Charge Qrr - 18 - C
THERMAL CHARACTERISTIC
CHARACTERISTIC SYMBOL MIN TYP MAX. UNIT
Junction to Case (IGBT Part, Per 1/2 Module) Rth(j-c) - - 0.09
Junction to Case (Didoe Part, Per 1/2 Module) Rth(j-c) - - 0.17 /W
Case to Heat Sink (Conductive grease applied) Rth(j-s) - 0.03 -
Data and specifications subject to change without notice.
2009. 6. 19 Revision No : 0 2/3
GM200HB12CT
Fig 1. Typ. IGBT Output Characteristics IGBT Fig 2. Typ. IGBT Out Characteristics
400 400
Tj=25 C VGE=17V
Tj=125 C VGE=15V
VGE=13V
300 300 VGE=9V
IC (A)
IC (A)
200 200
100 100
Tj=125 C
0 0
0 1 2 3 4 0 1 2 3 4
VCE (V) VCE (V)
Fig 3. Typ. Transfer Characteristics IGBT Fig 4. Reverse Bias Operating Area IGBT
400 450
Tj=25 C
350 400
Tj=125 C
300 350
300
250
IC (A)
IC (A)
250
200
200
150
150
100
100
50 50
VGE =15V, RG=2.7, Tj=125 C
0 0
5 6 7 8 9 10 11 12 0 300 600 900 1200 1500
VGE (V) VCE (V)
Fig 5. Forward Characteristics of Diode IGBT
400
Tj=25 C
350
Tj=125 C
300
250
IC (A)
200
150
100
50
0
0 0.4 0.8 1.2 1.6 2.0 2.4
VF (V)
2009. 6. 19 Revision No : 0 3/3
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