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SEMICONDUCTOR GM400HB06CT
TECHNICAL DATA
600V/400A 2 IN ONE PACKAGE
FEATURES
TENTATIVE
IGBT New Technology Unit : mm
OUTLINE DRAWING
Low VCE(sat)
Low Turn-off losses _
_
108.5 + 0.2
6.5 + 0.2
_
28 + 0.2 _
28 + 0.2
Short tail current
Positive temperature coefficient
G2
62.5 + 0.2
27 + 0.2
15 + 0.2
E2
APPLICATION
_
_
_
E1
AC & DC Motor controls G1
General purpose inverters M6
Optimized for high current inverter _
93 +0.2
Servo Controls _
108.5 + 0.2
UPS, Robotics
_
18 + 0.2 _
18 + 0.2 _
18 + 0.2
_
14 + 0.2 _
14 + 0.2 _
14 + 0.2 _
1.3 + 0.2
30.45 + 0.2
31.6 + 0.2
_
_
G2
E2
C2E1 C1
E2
E1
G1
Internal Circuit
MAXIMUM RATING (@Ta=25 Per Leg)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-to-Emitter Voltage @TC=25 VCES 600 V
Gate-Emitter Voltage VGES 20 V
@TC=25 500
Continuous Collector Current IC A
@TC=125 400
Pulsed Collector Current @TC=25 ICP 800 A
@TC=25 500
Diode Continuous Forward Current IF A
@TC=125 400
Diode Maximum Forward Current @TC=25 IFM 800 A
@TC=25 10
Short Circuit Test tP
@TC=125 8
Isolation Voltage test AC @ 1 minute Viso 2500 V
Junction Temperature Tj -40 ~ 150
Storage Temperature Tstg -40 ~ 125
Weight of Module Weight 360 g
Mounting Torque with screw : M6 4.0 N.m
Md
Terminal Connection torque : M6 4.0 N.m
2009. 3. 5 Revision No : 0 1/3
GM400HB06CT
STATIC CHARACTERISTICS (@Tj=25 Unless otherwise specified)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-to-Emitter Saturation Volatge VCE(ON) IC = 400A, VGE=15V 1.05 1.50 1.95
V
Gate Threshold Voltage VGE(th) IC = 8mA, VCE=VGE 5.0 5.8 6.5
Zero Gate Voltage Collector Current ICES VGE=0V, VCE=600V - - 5.0 mA
Gate-to-Emitter Leakage Volatge IGES VCE=0V, VCE=20V - - 400 nA
Diode Forward Voltage Drop VFM IF = 400A, VGE=0V - 1.6 2.0 V
Integrated gate resistor RGINT - - 1.0 -
ELECTRICAL CHARACTERISTICS (IGBT/DIODE)(@Ta=25 Unless otherwise specified)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
IGBT
Input Capacitance Cies - 24670 -
Ouput Capacitance Coes VCE=25V, VGE=0V, f=1MHz - 1540 - nF
Reverse Transfer Capacitance Cres - 732 -
Turn-On Delay Time td(on) - 70 -
Inductive Switching 125
Rise Time tr - 25 -
VCC=300V, IC=400A, ns
Turn-Off Delay Time td(off) - 260 -
VGE= 15V,RG=2.2
Fall Time tr - 60 -
DIODE
Maximum Peak Repetitive Reverse Voltage VRRM - 600 - - V
Maximum Reverse Ieakage current IRM VR=600V - - 350
Reverse Recovery Time trr - 125 - ns
IF=400A, VR=300V, di/dt=4000A/
Reverse Recovery Charge Qrr - 20 - C
THERMAL CHARACTERISTIC
CHARACTERISTIC SYMBOL MIN TYP MAX. UNIT
Junction to Case (IGBT Part, Per 1/2 Module) Rth(j-c) - - 0.12
Junction to Case (Didoe Part, Per 1/2 Module) Rth(j-c) - - 0.24 /W
Case to Heat Sink (Conductive grease applied) Rth(j-s) - 0.03 -
Data and specifications subject to change without notice.
2009. 3. 5 Revision No : 0 2/3
GM400HB06CT
Fig 1. Typ. IGBT Output Characteristics IGBT Fig 2. Typ. IGBT Out Characteristics
800 800
VGE=19V
Tvj=25 C
720 720 VGE=17V
Tvj=125 C VGE=15V
640 Tvj=150 C 640 VGE=13V
560 560 VGE=11V
VGE=9V
480 480
IC (A)
IC (A)
400 400
320 320
240 240
160 160
80 80
0 0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE (V) VCE (V)
Fig 3. Typ. Transfer Characteristics IGBT Fig 4. Reverse Bias Operating Area IGBT
800 900
Tvj=25 C
720 800
Tvj=125 C
640 Tvj=150 C 700
560
600
480
IC (A)
IC (A)
500
400
400
320
300
240
160 200
80 100
VGE =15V, RG=2.4, Tj=125 C
0 0
5 6 7 8 9 10 11 0 100 200 300 400 500 600 700
VGE (V) VCE (V)
Fig 5. Forward Characteristics of Diode IGBT
800
Tvj=25 C
720
Tvj=125 C
640 Tvj=150 C
560
480
IF (A)
400
320
240
160
80
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF (V)
2009. 3. 5 Revision No : 0 3/3
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