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SEMICONDUCTOR KTA1517S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
LOW NOISE AMPLIFIER APPLICATION.
FEATURES E
High Voltage : VCEO=-120V. L B L
DIM MILLIMETERS
Excellent hFE Linearity A _
2.93 + 0.20
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). B 1.30+0.20/-0.15
C 1.30 MAX
D
2
High hFE: hFE=200 700. 3 D 0.40+0.15/-0.05
A
G
E 2.40+0.30/-0.20
Low Noise : NF=1dB(Typ.), 10dB(Max.).
H
1 G 1.90
H 0.95
Complementary to KTC3911S. J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
N
C
P 7
J
MAXIMUM RATING (Ta=25 ) Q 0.1 MAX
K
M
CHARACTERISTIC SYMBOL RATING UNIT
1. EMITTER
Collector-Base Voltage VCBO -120 V
2. BASE
Collector-Emitter Voltage VCEO -120 V 3. COLLECTOR
Emitter-Base Voltage VEBO -5 V
Collector Current IC -100 mA
SOT-23
Base Current IB -20 mA
Collector Power Dissipation PC 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
h FE Rank Lot No.
Type Name
AC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
DC Current Gain hFE (Note) VCE=-6V, IC=-2mA 200 - 700
Collector-Emitter Saturation Voltage VCE(sat) IC=-10mA, IB=-1mA - - -0.3 V
Transition Frequency fT VCE=-6V, IC=-1mA - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 - pF
VCE=-6V, IC=-0.1mA
Noise Figure NF - 1.0 10 dB
f=1kHz, Rg=10k
Note : hFE Classification GR(G):200 400 BL(L):350 700
2001. 2. 24 Revision No : 3 1/3
KTA1517S
2001. 2. 24 Revision No : 3 2/3
KTA1517S
2001. 2. 24 Revision No : 3 3/3
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