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SEMICONDUCTOR KTA1520S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
E
L B L
DIM MILLIMETERS
MAXIMUM RATING (Ta=25 ) A _
2.93 + 0.20
B 1.30+0.20/-0.15
CHARACTERISTIC SYMBOL RATING UNIT C 1.30 MAX
D
2 3 0.45+0.15/-0.05
D
Collector-Base Voltage VCBO -120 V
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
Collector-Emitter Voltage VCEO -100 V H 0.95
J 0.13+0.10/-0.05
Emitter-Base Voltage VEBO -5 V
K 0.00 ~ 0.10
IC L 0.55
DC -1 P P
M 0.20 MIN
Collector Current A
Pulse * ICP -2 N 1.00+0.20/-0.10
N
P 7
C
J
Base Current IB -200 mA
M
K
Collector Power Dissipation PC 150 mW
Junction Temperature Tj 150 1. EMITTER
2. BASE
Storage Temperature Range Tstg -55 150
3. COLLECTOR
* Pulse Width = 300 S, Duty Cycle 2%.
SOT-23
Marking
Lot No.
Type Name
KMH
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A -120 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA -100 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-100 A -5 - - V
Collector Cut-Off Current ICBO VCB=-100V - - -100 nA
Emitter Cut-Off Current IEBO VEB=-4V - - -100 nA
Collector-Emitter Cut-Off Current ICES VCES=-100V - - -100 nA
VCE(sat) (1) IC=-250mA, IB=-25mA - - -0.2
Collector-Emitter Saturation Voltage ** V
VCE(sat) (2) IC=-500mA, IB=-50mA - - -0.3
Base-Emitter Saturation Voltage ** VBE(sat) IC=-500mA, IB=-50mA - - -1.1 V
Base-Emitter Voltag VBE VCE=-5V, IC=-1mA - - -1.0 V
hFE(1) VCE=-5V, IC=-1mA 100 - -
hFE(2) VCE=-5V, IC=-250mA 100 - -
DC Current Gain **
hFE(3) VCE=-5V, IC=-500mA 100 - 300
hFE(4) VCE=-5V, IC=-1A 50 - -
Transition Frequency fT VCE=-10V, IC=-50mA, f=100MHz 50 - - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz - - 5 pF
** Pulse Width = 300 S, Duty Cycle 2%.
2003. 2. 25 Revision No : 1 1/2
KTA1520S
VCE(sat) - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER SATURATION
-0.4 -0.4
Ta=-25 C I C /I B =10
VOLTAGE VCE(sat) (V)
VOLTAGE VCE(sat) (V)
-0.3 -0.3
-0.2 -0.2
Ta=-55 C
50
10
B=
B= Ta=25 C
/I
/I
Ta=100 C
IC
IC
-0.1 -0.1
0 0
-0.001 -0.01 -0.1 -1 -0.001 -0.01 -0.1 -1
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
VBE(sat) - I C h FE - I C
-1.2 400
I C /I B =10 VCE =-5V
BASE-EMITTER SATURATION
Ta=100 C
VOLTAGE VBE(sat) (V)
DC CURRENT GAIN h FE
-1.0 300
Ta=-55 C
Ta=25 C
-0.8 Ta=25 C 200
Ta=100 C Ta=-55 C
-0.6 100
-0.4 0
-0.001 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 -0.001 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (mA)
I C - VBE
-3
VCE =-5V
COLLECTOR CURRENT I C (A)
-1
-0.3
-0.1
C
C
5 C
100
-0.03
Ta=-55
Ta=2
Ta=
-0.01
-0.003
-0.001
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE VBE (V)
2003. 2. 25 Revision No : 1 2/2
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