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SEMICONDUCTOR KTA1571S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat).
High Collector Current Capability : IC and ICP.
Higher Efficiency Leading to Less Heat Generation.
E
L B L
DIM MILLIMETERS
A _
2.93 + 0.20
MAXIMUM RATING (Ta=25 ) B 1.30+0.20/-0.15
C 1.30 MAX
D
CHARACTERISTIC SYMBOL RATING UNIT 2 3 D 0.40+0.15/-0.05
A
G
E 2.40+0.30/-0.20
Collector-Base Voltage VCBO -120 V
H
1 G 1.90
H 0.95
Collector-Emitter Voltage VCEO -100 V J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Emitter-Base Voltage VEBO -5 V Q
L 0.55
P P
M 0.20 MIN
DC IC -1 N 1.00+0.20/-0.10
Collector Current A
N
C
P 7
Pulse * ICP -3
J
Q Max 0.1.
K
Base Current IB -300 mA M
Collector Power Dissipation** PC 350 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Pulse Width = 300 S, Duty Cycle 2%.
SOT-23
** Package Mounted on 99.5% Alumina 10 8 0.6mm.
MARKING
Lot No.
Type Name
KMA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A -120 - - V
Collector-Emitter Breakdown Voltage ** V(BR)CEO IC=-1mA -100 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-100 A -5 - - V
Collector Cut-Off Current ICBO VCB=-80V, IE=0A - - -100 nA
Emitter Cut-Off Current IEBO VEB=-4V, IC=0A - - -100 nA
Collector-Emitter Cut-Off Current ICES VCES=-80V, VBE=0V - - -100 nA
VCE(sat) (1) IC=-250mA, IB=-25mA - - -0.12
Collector-Emitter Saturation Voltage ** VCE(sat) (2) IC=-500mA, IB=-50mA - - -0.18 V
VCE(sat) (3) IC=-1A, IB=-100mA - - -0.32
Base-Emitter Saturation Voltage ** VBE(sat) IC=-1A, IB=-100mA - - -1.1 V
Base-Emitter Voltag VBE VCE=-5V, IC=-1A - - -1.0 V
hFE(1) VCE=-5V, IC=-1mA 150 - -
hFE(2) VCE=-5V, IC=-250mA 150 - -
DC Current Gain **
hFE(3) VCE=-5V, IC=-500mA 150 - 450
hFE(4) VCE=-5V, IC=-1A 125 - -
Transition Frequency fT VCE=-10V, IC=-50mA, f=100MHz 100 - - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz - 17 - pF
** Pulse Width = 300 S, Duty Cycle 2%.
2010. 2. 24 Revision No :3 1/3
KTA1571S
VCE(sat) - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER SATURATION
-1 -1
IC/IB=10 Ta=25 C
VOLTAGE VCE(sat) (V)
VOLTAGE VCE(sat) (V)
Ta=100 C
-10-1 -10-1
IC/IB=50
IC/IB=20
Ta=25 C
Ta=-55 C
-10-2 -10-2
-10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VBE(sat) - I C h FE - I C
-10 600
IC/IB=10 VCE=-10V
BASE-EMITTER SATURATION
DC CURRENT GAIN h FE
VOLTAGE VBE(sat) (V)
Ta=100 C
400
-1 Ta=25 C
Ta=-55 C
Ta=25 C 200
Ta=-55 C
Ta=100 C
-10-1 0
-10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VBE(sat) - I C I C - VCE
-10 -2
IC/IB=20 Ta=25 C IB=40.5mA IB=45mA
COLLECTOR CURRENT IC (A)
BASE-EMITTER SATURATION
Ta=25 C
IB=36mA
VOLTAGE VBE(sat) (V)
-1.6 IB=31.5mA
IB=27mA
-1.2
IB=9mA
-1
-0.8 IB=4.5mA
IB=13.5mA
IB=18mA
-0.4
IB=22.5mA
-10-1 0
-10-1 -1 -10 -102 -103 -104 0 -1 -2 -3 -4 -5
COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V)
2010. 2. 24 Revision No : 3 2/3
KTA1571S
SAFE OPERATING AREA
-10000
COLLECTOR CURRENT I C (mA)
IC MAX(PULSE)*
100mS 10mS* 1mS*
-1000
IC MAX(CONTINUOUS)
-100
DC OPERATION(Ta=25 C)
-10
*SINGLE NONREPETTTTVE PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
-1
-0.1 -1 -10 -100 -1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
2010. 2. 24 Revision No : 3 3/3
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