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SEMICONDUCTOR KTA1659/A
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
A C
FEATURES
DIM MILLIMETERS
F
High Transition Frequency : fT=100MHz(Typ.). S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
Complementary to KTC4370/A. E
C _
2.70 + 0.3
B
D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
_
MAXIMUM RATING (Ta=25 ) L L J 13.6 + 0.5
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
CHARACTERISTIC SYMBOL RATING UNIT M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
Collector-Base KTA1659 -160 _
P 6.8 + 0.1
VCBO V _
Voltage Q 4.5 + 0.2
KTA1659A -180 R _
2.6 + 0.2
N N H S 0.5 Typ
Collector-Emitter KTA1659 -160
VCEO V
Voltage KTA1659A -180
VEBO 1. BASE
Emitter-Base Voltage -5 V
Q
1 2 3
2. COLLECTOR
Collector Current IC -1.5 A 3. EMITTER
Base Current IB -0.15 A
Collector Power Dissipation (Tc=25 ) PC 20 W TO-220IS
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -1.0 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1.0 A
Collector-Emitter KTA1659 -160 - -
V(BR)CEO IC=-10mA, IB=0 V
Breakdown Voltage KTA1659A -180 - -
DC Current Gain hFE (Note) VCE=-5V, IC=-100mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -1.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V
Transition Frequency fT VCE=-10V, IC=-100mA - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 30 - pF
Note : hFE Classification O:70~140, Y:120~240
2007. 5. 21 Revision No : 1 1/3
KTA1659/A
I C - V CE h FE - I C
-2.0 500
COLLECTOR CURRENT I C (mA)
COMMON EMITTER COMMON EMITTER
300
Ta=25 C Ta=25 C
DC CURRENT GAIN h FE
-1.6 -250 -80
-140
-30 100
-1.2
VCE
-12
VC
VCE
50
=-10V
E=
=-5V
-5
-2V
-0.8 30
-3
-0.4 -2
10
-1
I B =0mA
0 5
0 -4 -8 -12 -16 -20 -3 -10 -30 -100 -300 -1K -2K
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
500 -1.0
COMMON EMITTER
300 Ta=100 C Ta=25 C
DC CURRENT GAIN h FE
-0.5
VOLTAGE VCE(sat) (V)
Ta=25 C
Ta=0 C - 0.3
100
50 0
VCE =-10V =1
30 /I B 5
VCE =-5V IC =
- 0.1 /I B
IC
COMMON EMITTER
10 -0.05
Tc=25 C
5 -0.03
-3 -10 -30 -100 -300 -1K -2K -5 -10 -30 -100 -300 -1K -3K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C I C - V BE
COLLECTOR-EMITTER SATURATION
-5.0 -1.6K
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
-3.0 -1.4K VCE =-5V
IC /I B =10
VOLTAGE VCE(sat) (V)
-1.2K
-1.0 -1K
C
C
C
100
25
-0.5 -800
Ta=0
Ta=
Ta=
-0.3 -600
C
00
=1 -400
Ta 25
-0.1 0
-200
-0.05 0
-5 -10 -30 -100 -300 -1K -3K 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)
2007. 5. 21 Revision No : 1 2/3
KTA1659/A
C ob - VCB SAFE OPERATING AREA
COLLECTOR OUTPUT CAPACITANCE
100 -5
I E =0 I C MAX(PULSED) * * SINGLE
f=1MHz -3 NONREPETITIVE
50 PULSE Tc=25 C
Tc=25 C 1
50 00
COLLECTOR CURRENT I C (A)
30
10
DC 0m ms
1m
ms
-1 I C MAX OP s
* *
s
ER
AT *
C ob (pF)
(CONTINUOUS) *
I
10 -0.5 TH ON
LI ER
MI MA
-0.3 TE L
5 D
S/B
3
LI
M
-0.1
IT
CURVES MUST BE
ED
DERATED LINEARLY WITH
-0.05
VCEO MAX.
1 INCREASE IN TEMPERATURE
-0.5 -1 -3 -5 -10 -30 -50 -100 -200 -0.03 VCEO MAX=-160V
KTA1659
COLLECTOR-BASE VOLTAGE VCB (V) VCEO MAX=-180V
KTA1659A
-0.01
-3 -5 -10 -30 -50 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V)
fT - IC Pc - Ta
COLLECTOR POWER DISSIPATION PC (W)
TRANSITION FREQUENCY f T (MHz)
500 25
COMMON EMITTER 1 Tc=Ta
300 Tc=25 C 1 INFINITE HEAT SINK
20 2 NO HEAT SINK
V
=-5
VCE
100 15
=-2V
VCE
50 10
30
5
2
10 0
-2 -5 -10 -30 -50 -100 -300 -500 0 20 40 60 80 100 120 140 160
COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)
2007. 5. 21 Revision No : 1 3/3
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