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SEMICONDUCTOR KTA1660
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE SWITCHING APPLICATION.
FEATURES A
C
High Voltage : VCEO=-150V.
H
High Transition Frequency : fT=120MHz(Typ.). G
1W (Monunted on Ceramic Substrate).
B
J
E
Small Flat Package.
DIM MILLIMETERS
Complementary to KTC4372. A 4.70 MAX
D D B _
2.50 + 0.20
K C 1.70 MAX
D 0.45+0.15/-0.10
F F
E 4.25 MAX
F _
1.50 + 0.10
G 0.40 TYP
MAXIMUM RATING (Ta=25 ) H 1.75 MAX
1 2 3
J 0.75 MIN
CHARACTERISTIC SYMBOL RATING UNIT K 0.5+0.10/-0.05
Collector-Base Voltage VCBO -150 V
1. BASE
Collector-Emitter Voltage VCEO -150 V 2. COLLECTOR (HEAT SINK)
3. EMITTER
Emitter-Base Voltage VEBO -5 V
Collector Current IC -50 mA
Base Current IB -10 mA
SOT-89
PC 500 mW
Collector Power Dissipation
PC* 1 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
PC* : KTA1660 mounted on ceramic substrate (250mm x0.8t) 2 Marking
h FE Rank Lot No.
Type Name
B
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-150V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
DC Current Gain hFE (Note) VCE=-5V, IC=-10mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-10mA, IB=-1mA - - -0.8 V
Base-Emitter Voltage VBE VCE=-5V, IC=-30mA - - -0.9 V
Transition Frequency fT VCE=-30V, IC=-10mA - 120 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 5.0 pF
Note : hFE Classification O:70 140, Y:120 240
1998. 6. 15 Revision No : 1 1/3
KTA1660
I C - V CE h FE - I C
-50 500
COMMON
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
EMITTER
300
Ta=25 C
DC CURRENT GAIN h FE
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