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SEMICONDUCTOR KTA1661
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES A
C
High Voltage : VCEO=-120V.
H
High Transition Frequency : fT=120MHz(Typ.). G
1W(Monunted on Ceramic Substrate).
B
J
E
Small Flat Package.
DIM MILLIMETERS
Complementary to KTC4373. A 4.70 MAX
D D B _
2.50 + 0.20
K C 1.70 MAX
D 0.45+0.15/-0.10
F F
E 4.25 MAX
F _
1.50 + 0.10
G 0.40 TYP
MAXIMUM RATING (Ta=25 ) H 1.75 MAX
1 2 3
J 0.75 MIN
CHARACTERISTIC SYMBOL RATING UNIT K 0.5+0.10/-0.05
Collector-Base Voltage VCBO -120 V
1. BASE
Collector-Emitter Voltage VCEO -120 V 2. COLLECTOR (HEAT SINK)
3. EMITTER
Emitter-Base Voltage VEBO -5 V
Collector Current IC -800 mA
Base Current IB -160 mA
SOT-89
PC 500 mW
Collector Power Dissipation
PC* 1 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2
PC* : KTA1661 mounted on ceramic substrate (250mm x0.8t) Marking
h FE Rank Lot No.
Type Name
D
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -120 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 - - V
DC Current Gain hFE (Note) VCE=-5V, IC=-100mA 80 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -1.0 V
Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V
Transition Frequency fT VCE=-5V, IC=-100mA - 120 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 30 pF
Note : hFE Classification O:80 160, Y:120 240
1998. 6. 15 Revision No : 2 1/2
KTA1661
I C - V CE h FE - I C
-800 1k
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
A
A
VCE =-5V
m
-10m
500
-7
Ta=25 C
DC CURRENT GAIN h FE
-5mA
-600 300
-4mA Ta=100 C
Ta=25 C
-3mA
-400 100 Ta=-25 C
-2mA
50
-200 I B=-1mA 30
0mA
0 10
0 -4 -8 -12 -16 -20 -3 -10 -30 -100 -300 -1k
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C I C - V BE
COLLECTOR-EMITTER SATURATION
-0.5 -1.0
COLLECTOR CURRENT I C (mA)
COMMON EMITTER COMMON EMITTER
-0.3 VCE =-5V
I C /I B =10
VOLTAGE VCE(sat) (V)
-0.8
-0.6
Ta=100 C
Ta=-25 C
Ta=25 C
-0.1
C -0.4
00
=1
-0.05 Ta
Ta=25 C -0.2
Ta=-25 C
-0.02 0
-3 -10 -30 -100 -300 -1k 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)
SAFE OPERATING AREA Pc - Ta
COLLECTOR POWER DISSIPATION PC (W)
-3k 1.2
I C MAX(PULSE) 1 MOUNTED ON CERAMIC
COLLECTOR CURRENT I C (mA)
1
I C MAX SUBSTRATE(250mm 2 x0.8t)
1m
-1k (CONTINUOUS) 1.0
10
s
m 2 Ta=25 C
10 s
-300 DC 0m
OP s 0.8
ER
-100 AT
IO
N 0.6 2
-30
SINGLE NONREPETITIVE 0.4
-10 PULSE Ta=25 C
CURVES MUST BE DERATED
-3 LINEARLY WITH INCREASE 0.2
IN TEMPERATURE
-1 0
-0.3 -1 -3 -10 -30 -100 -300 0 20 40 60 80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE V CE (V) AMBIENT TEMPERATURE Ta ( C)
1998. 6. 15 Revision No : 2 2/2
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