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kta1668


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                                    SEMICONDUCTOR                                                                           KTA1668
                                              TECHNICAL DATA                                 EPITAXIAL PLANAR PNP TRANSISTOR


  VOLTAGE REGULATOR, RELAY,
  LAMP DRIVER, INDUSTRIAL USE
                                                                                                          A
                                                                                                                                  C
  FEATURES
                                                                                                          H
    High Voltage : VCEO=-60V(Min.).                                                                                                      G

    High Current : IC(Max.)=-1A.




                                                                                                                        B
                                                                                                                         J

                                                                                                                        E
    High Transition Frequency : fT=150MHz (Typ.).
                                                                                                                                         DIM       MILLIMETERS
    Wide Area of Safe Operation.                                                                                                          A           4.70 MAX
                                                                                              D                         D                 B                _
                                                                                                                                                      2.50 + 0.20
    Complementary to KTC4378.
                                                                                                               K                          C           1.70 MAX
                                                                                                                                          D        0.45+0.15/-0.10
                                                                                                      F        F
                                                                                                                                          E           4.25 MAX
                                                                                                                                          F                _
                                                                                                                                                      1.50 + 0.10
                                                                                                                                          G            0.40 TYP
                                                                                                  1       2        3                      H           1.75 MAX
                                                                                                                                          J            0.75 MIN
  MAXIMUM RATING (Ta=25                   )
                                                                                                                                          K         0.5+0.10/-0.05
           CHARACTERISTIC                     SYMBOL         RATING       UNIT
                                                                                                              1. BASE
    Collector-Base Voltage                     VCBO              -80        V
                                                                                                              2. COLLECTOR (HEAT SINK)
    Collector-Emitter Voltage                  VCEO              -60        V                                 3. EMITTER


    Emitter-Base Voltage                       VEBO               -5        V
                                  DC            IC                -1
    Collector Current                                                       A                                                SOT-89
                                  Pulse         ICP               -2
                                                PC               500       mW
    Collector Power Dissipation
                                               PC *               1         W
    Junction Temperature                        Tj               150
    Storage Temperature Range                  Tstg          -55 150                              Marking
                                                        2
  PC* : Package mounted on ceramic substrate (250mm x0.8t)                                            h FE Rank                                     Lot No.



                                                                                                  Type Name
                                                                                                                             J




  ELECTRICAL CHARACTERISTICS (Ta=25                         )
               CHARACTERISTIC                         SYMBOL                 TEST CONDITION                        MIN.         TYP.     MAX.              UNIT
    Collector Cut-off Current                           ICBO           VCB=-50V, IE=0                                   -         -          -100            nA
    Emitter Cut-off Current                             IEBO           VEB=-4V, IC=0                                    -         -          -100            nA
                                                       hFE(1)          VCE=-2V, IC=-50mA                               120        -          200
    DC Current Gain
                                                       hFE(2)          VCE=-2V, IC=-1A                                 30         -            -
    Collector-Emitter Breakdown Voltage               V(BR)CEO         IC=-1mA, IB=0                                   -60        -            -              V
    Collector-Emitter Saturation Voltage               VCE(sat)        IC=-500mA, IB=-50mA                              -       -0.2         -0.7             V
    Base-Emitter Saturation Voltage                    VBE(sat)        IC=-500mA, IB=-50mA                              -       -0.85        -1.2             V
    Transition Frequency                                    fT         VCE=-10V, IC=-50mA                               -       150            -            MHz
    Collector Output Capacitance                         Cob           VCB=-10V, f=1MHz                                 -        12            -              pF

  Note : hFE(1) Classification O:60 120, Y:120         200




1999. 12. 22                      Revision No : 2                                                                                                                    1/3
                                 KTA1668




1999. 12. 22   Revision No : 2             2/3
                                                                                                  KTA1668


                                                     SAFE OPERATING AREA                                                                                               P C - Ta
                                    -5                                                                                                1.2k




                                                                                                        COLLECTOR POWER DISSIPATION
                                                                                        1PULSE
    COLLECTOR CURRENT I C (A)




                                    -3   I CP                                                                                                                    (1)    Mounted on ceramic
                                                                                                                                                 (1)                    substrate




                                                                                  1m
                                                                                                                                       1k




                                                                                    10
                                                                                     se
                                         I C MAX.                                                                                                                       (250mm 0.8t)




                                                                                       ms
                                                                                       c
                                    -1                                                                                                                           (2)    Ta=25 C




                                                                                        ec
                                                                             1s
                                  -0.5                   DC
                                                                               ec                                                     800
                                  -0.3




                                                                                                                 P C (mW)
                                                              OP




                                                                                       10
                                                                ER




                                                                                         0m
                                                                    AT                                                                600




                                                                                           se
                                                                      IO                                                                         (2)




                                                                                             c
                                                                         N
                                  -0.1
                                 -0.05                                                                                                400
                                 -0.03
                                                                                                                                      200
                                 -0.01
                                -0.005                                                                                                  0
                                      -0.5      -1       -3    -5    -10             -30 -50     -100                                        0         20   40    60      80    100    120   140   160

                                             COLLECTOR-EMITTER VOLTAGE VCE (V)                                                                          AMBIENT TEMPERATURE Ta ( C)




1999. 12. 22                                                  Revision No : 2                                                                                                                            3/3



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