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SEMICONDUCTOR KTA1700
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION. A
B D
FEATURES C
E
High Transition Frequency : fT=100MHz(Typ.).
F
Complementary to KTC2800.
G
H
DIM MILLIMETERS
J
MAXIMUM RATING (Ta=25 ) A 8.3 MAX
K L B 5.8
CHARACTERISTIC SYMBOL RATING UNIT C 0.7
D _
3.2 + 0.1
Collector-Base Voltage VCBO -160 V E 3.5
F _
11.0 + 0.3
G 2.9 MAX
Collector-Emitter Voltage VCEO -160 V M
H 1.0 MAX
J 1.9 MAX
Emitter-Base Voltage VEBO -5 V O K _
0.75 + 0.15
N P
1 2 3 L _
15.50 + 0.5
Collector Current IC -1.5 A M _
2.3 + 0.1
N _
0.65 + 0.15
Base Current IB -0.3 A 1. EMITTER O 1.6
2. COLLECTOR P 3.4 MAX
Collector Power Ta=25 1.5 3. BASE
PC W
Dissipation Tc=25 10
Junction Temperature Tj 150 TO-126
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -1.0 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1.0 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -160 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 - - V
DC Current Gain hFE(Note) VCE=-5V, IC=-100mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -1.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V
Transition Frequency fT VCE=-10V, IC=-100mA - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 30 - pF
Note : hFE Classification O:70~140, Y:120~240
2004. 3. 22 Revision No : 4 1/3
KTA1700
I C - VCE h FE - I C
-1.0 300
A A COMMON
-8m
COLLECTOR CURRENT I C (A)
mA
2m Tc=100 C
-1 -6mA EMITTER
-20
DC CURRENT GAIN h FE
-0.8 Tc=25 C Tc=25 C
100
-0.6 -4mA Tc=-25 C
50
-0.4
I B =-2mA
30
COMMON EMITTER
-0.2
VCE =-5V
0mA
0 10
0 -2 -4 -6 -8 -10 -12 -14 -16 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A)
VCE(sat) - I C I C - VBE
-1
COLLECTOR-EMITTER SATURATION
-1.0
COMMON EMITTER COMMON
COLLECTOR CURRENT I C (A)
I C / I B =10 EMITTER
-0.5 -0.8 VCE =-5V
VOLTAGE VCE(sat) (V)
-0.3
Tc=100 C
Tc=-25 C
-0.6
Tc=25 C
0 C
Tc=10
Tc=25 C
-0.4
Tc=-25 C
-0.1
-0.2
-0.05
-0.03 0
-0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE VBE (V)
f T - IC Pc - Ta
COLLECTOR POWER DISSIPAZTION PC (W)
300 30
TRANSITION FREQUENCY f T (MHz)
1 Tc=Ta
INFINITE HEAT SINK
25 2 NO HEAT SINK
100 20
50 15
1
30 10
COMMON EMITTER
VCE =-10V 5
Tc=25 C 2
0 0
-5 -10 -30 -100 -300 -1k 0 20 40 60 80 100 120 140 160 180
COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)
2004. 3. 22 Revision No : 4 2/3
KTA1700
SAFE OPERATING AREA
-5
I C MAX(PULSED) SINGLE NONRE-
-3 PETITIVE
I C MAX PULSE Tc=25 C
COLLECTOR CURRENT I C (A)
(CONTINUOUS)
-1.5
-1
DC
1m
10
-0.5 S/B ms
10
s
0m
LI
M
s
-0.3 IT
ED
-0.1
CURVES MUST BE
-0.05 DERATED LINEARLY
WITH INCREASE
IN TEMPERATURE
-0.02
-5 -10 -30 -50 -100 -300
COLLECTOR-EMITTER VOLTAGE V CE (V)
2004. 3. 22 Revision No : 4 3/3
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