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SEMICONDUCTOR KTA1718D/L
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
A I
C J
FEATURES DIM MILLIMETERS
D
A _
6.60 + 0.2
Low Collector Saturation Voltage B _
6.10 + 0.2
C _
5.0 + 0.2
: VCE(sat)=-0.5V(Max.) (IC=-1A) D _
1.10 + 0.2
B
E _
2.70 + 0.2
F _
2.30 + 0.1
High Speed Switching Time : tstg=1 S(Typ.) H 1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
Complementary to KTC2815D/L.
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
O _
0.90 + 0.1
1 2 3 _
P 1.00 + 0.10
Q 0.95 MAX
1. BASE
MAXIMUM RATING (Ta=25 ) 2. COLLECTOR
3. EMITTER
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
VCEO DPAK
Collector-Emitter Voltage -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -2 A A I
C J
Collector Power Ta=25 1.0
D
PC W
Dissipation Tc=25 10 DIM MILLIMETERS
B
A _
6.60 + 0.2
B _
6.10 + 0.2
Junction Temperature Tj 150 _
5.0 + 0.2
Q
C
K
D 1.10 +_ 0.2
H P
_
Storage Temperature Range Tstg -55 150 G
E 9.50 + 0.6
_
E
F 2.30 + 0.1
G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _
K 2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -50 - - V
hFE(1) (Note) VCE=-2V, IC=-0.5A 70 - 240
DC Current Gain
hFE2 VCE=-2V, IC=-1.5A 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-1A, IB=-0.05A - - -0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-1A, IB=-0.05A - - -1.2 V
Transition Frequency fT VCE=-2V, IC=-0.5A - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 30 - pF
OUTPUT
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