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SEMICONDUCTOR KTA1962
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
POWER AMPLIFIER APPLICATIONS.
A Q B
K
FEATURES
F
I
High Collector Voltage : VCEO=-230V(Min.)
E
Complementary to KTC5242.
C
DIM MILLIMETERS
Recommended for 80W High Fidelity Audio Frequency A 15.9 MAX
J
H
B 4.8 MAX
Amplifier Output Stage. C _
20.0 + 0.3
G
D _
2.0 + 0.3
D d 1.0+0.3/-0.25
E 2.0
L
F 1.0
G 3.3 MAX
d
MAXIMUM RATING (Ta=25 ) H
I
9.0
4.5
P P T J 2.0
CHARACTERISTIC SYMBOL RATING UNIT M
K 1.8 MAX
L _
20.5 + 0.5
Collector-Base Voltage VCBO -230 V M 2.8
P _
5.45 + 0.2
Collector-Emitter Voltage VCEO -230 V 1 2 3 Q 3.2 + 0.2
_
T 0.6+0.3/-0.1
Emitter-Base Voltage VEBO -5 V 1. BASE
2. COLLECTOR
Collector Current IC -15 A 3. EMITTER
Base Current IB -1.5 A
Collector Power Dissipation (Tc=25 ) PC 130 W
TO-3P(N)
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-230V, IE=0 - - -5.0 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -5.0 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -230 - - V
hFE (1) (Note) VCE=-5V, IC=-1A 55 - 160
DC Current Gain
hFE (2) VCE=-5V, IC=-7A 35 60 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-8A, IB=-0.8A - -1.5 -3.0 V
Base-Emitter Voltage VBE VCE=-5V, IC=-7A - -1.0 -1.5 V
Transition Frequency fT VCE=-5V, IC=-1A - 30 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 360 - pF
Note : hFE(1) Classification R:55 110 , O:80 160
2004. 8. 19 Revision No : 2 1/3
KTA1962
I C - VCE I C - VBE
-12 COMMON -12
-300 -200
COLLECTOR CURRENT I C (A)
EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (A)
Tc=25 C V CE =-5V
-10 -140 -10
-8 -100 -8
Tc= 0 C
C
C
-80
-25
-6
10
-6
25
-60
Tc=
Tc=
-4 -40 -4
I B =-20mA
-2 -2
0 0
0 -2 -4 -6 -8 -10 -12 -14 -16 0 -0.4 -0.8 -1.2 -1.6 -2.0
COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE V BE (V)
h FE - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
1k 3
COMMON EMITTER COMMON EMITTER Tc=25 C
500 VCE =-5V
DC CURRENT GAIN h FE
IC /I B =10
300 1
VOLTAGE V CE(sat) (V)
Tc=100 C Tc=100 C
0.5
100 0.3
Tc=25 C Tc=-25 C
50 Tc=-25 C
30 0.1
0.05
10 0.03
3 0.01
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 -20 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -20
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
VBE(sat) - I C fT - I C
TRANSITION FREQUENCY f T (MHz)
-10 100
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
IC /I B =10 VCE=-5V
50
-3 Tc=25 C
VOLTAGE VBE(sat) (V)
30
-1 Tc=-25 C
10
Tc=25 C
-0.3 Tc=100 C
5
3
-0.1
-0.03 1
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 -20 -0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
2004. 8. 19 Revision No : 2 2/3
KTA1962
Pc - Ta r th - t w
160
TRANSIENT THERMAL RESISTANCE
COLLECTOR POWER DISSIPATION
CURVES SHOULD BE APPLIED IN
Tc=Ta THERMAL LIMITED AREA.
INFINITE HEAT SINK (SINGLE NONREPETITIVE PULSE)
1 INFINITE HEAT SINK
120
2 NO HEAT SINK
50
r th ( C/W)
2
PC (W)
10
80
1
1
40
0.1
0 0.01
0 40 80 120 160 200 0.001 0.01 0.1 1 10 100 1k
AMBIENT TEMPERATURE Ta ( C) PULSE WIDTH t w (s)
SAFE OPERATING AREA
-50
I C MAX(PULSED)
-30 10
I C MAX 10 ms
ms
COLLECTOR CURRENT I C (A)
(CONTINUOUS) 10 * *
0m
-10 s*
DC
O
-5 Tc PERA
=2
-3 5 TIO
C N
-1
-0.5
-0.3 * SINGLE NONREPETITIVE
VCEO MAX
PULSE Tc=25 C
-0.1 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
-0.05 IN TEMPERATURE
-0.03
-2 -5 -10 -30 -50 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V)
2004. 8. 19 Revision No : 2 3/3
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