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SEMICONDUCTOR KTA1042D/L
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES A I
C J
Low Collector-Emitter Saturation Voltage
DIM MILLIMETERS
: VCE(sat)=-2.0V(Max.).
D
A _
6.60 + 0.2
B _
6.10 + 0.2
Complementary to KTC2022D/L. C _ 0.2
5.0 +
_
D 1.10 + 0.2
B
E _
2.70 + 0.2
F _
2.30 + 0.1
H 1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
O
J _
0.5 + 0.1
H P K _ 0.20
2.00 +
MAXIMUM RATING (Ta=25 ) F F L
L
M
_
0.50 + 0.10
_
0.91+ 0.10
O _
0.90 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT 1 2 3
P _
1.00 + 0.10
Q 0.95 MAX
Collector-Base Voltage VCBO -100 V 1. BASE
2. COLLECTOR
Collector-Emitter Voltage VCEO -100 V 3. EMITTER
Emitter-Base Voltage VEBO -5 V
Collector Current IC -5 A
DPAK
Base Current IB -0.5 A
Collector Power Dissipation (Tc=25 ) PC 20 W
Junction Temperature Tj 150 A
C
I
J
Storage Temperature Range Tstg -55 150
D
DIM MILLIMETERS
B
A _
6.60 + 0.2
B _
6.10 + 0.2
_
5.0 + 0.2
Q
C
K
D _
1.10 + 0.2
H P
E _
9.50 + 0.6
G _
E
F 2.30 + 0.1
G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _
K 2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -100 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -100 - - V
hFE(1) (Note) VCE=-5V, IC=-1A 70 - 240
DC Current Gain
hFE(2) VCE=-5V, IC=-4A 20 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-4A, IB=-0.4A - - -2.0 V
Base-Emitter Voltage VBE VCE=-5V, IC=-4A - - -1.5 V
Transition Frequency fT VCE=-5V, IC=-1A - 30 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 270 - pF
Note : hFE(1) Classification O:70~140, Y:120~240.
2003. 3. 27 Revision No : 3 1/2
KTA1042D/L
I C - V CE VCE(sat) - I C
-5 2
COLLECTOR-EMITTER SATURATION
-250 -200 -150 COMMON EMITTER
I C /I B =10
COLLECTOR CURRENT I C (A)
-100 1
-4
VOLTAGE VCE(sat) (V)
-0.5
-3 -50
-0.3
C
=75
-2 IB =-20mA Tc
-0.1
Tc=25 C
-1
COMMON EMITTER Tc=-25 C
-0.05
Tc=25 C
0
0 -0.03
0 -1 -2 -3 -4 -5 -6 -7 -0.01 -0.03 -0.1 -0.3 -1 -3 -5
COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A)
h FE - I C SAFE OPERATING AREA
500 -20
I C MAX(PULSED) *
300 -10
COLLECTOR CURRENT I C (A)
Tc=75 C
DC CURRENT GAIN hFE
I C MAX
(CONTINUOUS)
-5
1m
Tc=25 C
10 s *
s*
10
1s
ms
100 -3
0m
DC *
*
Tc=-25 C O
50 Tc PER
=2 A
5 TIO
-1 C N
30
COMMON EMITTER
VCE =-5V -0.5
* SINGLE NONREPETITIVE
VCEO MAX.
-0.3 PULSE Tc=25 C
10
CURVES MUST BE DERATED
-0.01 -0.03 -0.1 -0.3 -1 -3 -5
LINEARLY WITH INCREASE
IN TEMPERATURE
COLLECTOR CURRENT I C (A) -0.1
-3 -10 -30 -100 -200
COLLECTOR-EMITTER VOLTAGE VCE (V)
Pc - Ta
COLLECTOR POWER DISSIPATION PC (W)
24
1 Tc=25 C
1
20 2 Ta=25 C
16
12
8
4
2
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 27 Revision No : 3 2/2
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