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SEMICONDUCTOR KTA1225D/L
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
FEATURES A I
High Transition Frequency : fT=100MHz(Typ.). C J
DIM MILLIMETERS
Complementary to KTC2983D/L
D
A _
6.60 + 0.2
B _
6.10 + 0.2
C _ 0.2
5.0 +
D _
1.10 + 0.2
B
E _
2.70 + 0.2
F _
2.30 + 0.1
H 1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
MAXIMUM RATING (Ta=25 )
O
J _
0.5 + 0.1
H P K _ 0.20
2.00 +
CHARACTERISTIC SYMBOL RATING UNIT F F L
L
M
_
0.50 + 0.10
_
0.91+ 0.10
O _
0.90 + 0.1
Collector-Base Voltage VCBO -160 V 1 2 3
P _
1.00 + 0.10
Q 0.95 MAX
Collector-Emitter Voltage VCEO -160 V 1. BASE
2. COLLECTOR
Emitter-Base Voltage VEBO -5 V 3. EMITTER
Collector Current IC -1.5 A
Base Current IB -0.3 A
DPAK
Collector Power Ta=25 1.0
PC W
Dissipation Tc=25 10
Junction Temperature Tj 150 A I
C J
Storage Temperature Range Tstg -55 150
D
DIM MILLIMETERS
B
A _
6.60 + 0.2
B _
6.10 + 0.2
_
5.0 + 0.2
Q
C
K D _
1.10 + 0.2
H P
E _
9.50 + 0.6
G E
F _
2.30 + 0.1
G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _
K 2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -1.0 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1.0 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -160 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 - - V
DC Current Gain hFE(Note) VCE=-5V, IC=-100mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -1.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V
Transition Frequency fT VCE=-10V, IC=-100mA - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 30 - pF
Note : hFE Classification O:70~140, Y:120~240
2003. 3. 27 Revision No : 2 1/3
KTA1225D/L
I C - VCE hFE - I C
-1.0 300
A A COMMON
mA
2m -8m Tc=100 C
COLLECTOR CURRENT I C (A)
-1 -6mA EMITTER
-20
DC CURRENT GAIN h FE
-0.8 Tc=25 C
Tc=25 C
100
-0.6 -4mA Tc=-25 C
50
-0.4
I B =-2mA
30
COMMON EMITTER
-0.2
VCE =-5V
0mA
0 10
0 -2 -4 -6 -8 -10 -12 -14 -16 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A)
VCE(sat) - I C I C - VBE
-1
COLLECTOR-EMITTER SATURATION
-1.0
COMMON EMITTER COMMON
COLLECTOR CURRENT IC (A)
I C /I B =10 EMITTER
-0.5 -0.8
VOLTAGE VCE(sat) (V)
VCE =-5V
-0.3
Tc=100 C
Tc=-25 C
Tc=25 C
-0.6
C
100
Tc= Tc=25 C
-0.4
Tc=-25 C
-0.1
-0.2
-0.05
-0.03 0
-0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE VBE (V)
f T - IC Pc - Ta
COLLECTOR POWER DISSIPAZTION PC (W)
300 30
TRANSITION FREQUENCY f T (MHz)
1 Tc=25 C
25 2 Ta=25 C
100 20
50 15
1
30 10
COMMON EMITTER
VCE =-10V
5 2
Tc=25 C
0 0
-0.005 -0.01 -0.03 -0.1 -0.3 -1 0 20 40 60 80 100 120 140 160 180
COLLECTOR CURRENT I C (A) AMBIENT TEMPERATURE Ta ( C)
2003. 3. 27 Revision No : 2 2/3
KTA1225D/L
SAFE OPERATING AREA
5
I C MAX(PULSED) *
3
I C MAX
COLLECTOR CURRENT I C (A)
(CONTINUOUS)
1.5
1
DC
1m *
0.5 OP 10
s*
Tc ER ms
10
=2 AT
0m
0.3 5 I
C ON
s*
0.1
* SINGLE NONREPETITIVE
PULSE Tc=25 C
0.05 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
0.02
5 10 30 50 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 3. 27 Revision No : 2 3/3
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