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SEMICONDUCTOR KTA1242D/L
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
A I
FEATURES C J
DIM MILLIMETERS
hFE=100 320 (VCE=-2V, IC=-0.5A).
D
A _
6.60 + 0.2
B _
6.10 + 0.2
Low Collector Saturation Voltage. C _ 0.2
5.0 +
D _
1.10 + 0.2
B
: VCE(sat)=-0.5V (IC=-3A, IB=-75mA). E _
2.70 + 0.2
F _
2.30 + 0.1
H 1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
O
J _
0.5 + 0.1
H P K _ 0.20
2.00 +
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
MAXIMUM RATING (Ta=25 ) 1 2 3
O _
0.90 + 0.1
P _
1.00 + 0.10
CHARACTERISTIC SYMBOL RATING UNIT Q 0.95 MAX
1. BASE
Collector-Base Voltage VCBO -35 V 2. COLLECTOR
3. EMITTER
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltag VEBO -8 V
Collector Current IC -5 A DPAK
Base Current IB -0.5 A
Collector Power Dissipation PC 1.0 W A I
C J
Junction Temperature Tj 150
D
Storage Temperature Range Tstg -55 150 DIM MILLIMETERS
B
A _
6.60 + 0.2
B _
6.10 + 0.2
_ 0.2
5.0 +
Q
C
K
D 1.10 +_ 0.2
H P
E _
9.50 + 0.6
G _
E
F 2.30 + 0.1
G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _ 0.2
K 2.0 +
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-8V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -20 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -8 - - V
hFE(1) (Note) VCE=-2V, IC=-0.5A 100 - 320
DC Current Gain
hFE(2) VCE=-2V, IC=-4A 70 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-3A, IB=-75mA - - -0.5 V
Base-Emitter Voltage VBE VCE=-2V, IC=-4A - - -1.5 V
Transition Frequency fT VCE=-2V, IC=-0.5A - 170 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 62 - pF
Note : hFE(1) Classification O:100~200, Y:160~320
2003. 3. 27 Revision No : 4 1/2
KTA1242D/L
I C - VCE I C - VBE
-8 -8
-150mA COMMON EMITTER
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
-100mA Tc=25 C
-6 -70mA -6
-50mA
C
-4 -30mA -4
100
Tc=-25 C
-20mA
Tc=
I B =-10mA Tc=25 C
-2 -2
COMMON EMITTER
V CE =-2V
0 0
0 -2 -4 -6 -8 -10 0 -0.4 -0.8 -1.2 -1.6 -2.0
COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
h FE - I C VCE(sat) - I C
1k -3
COLLECTOR-EMITTER SATURATION
COMMON EMITTER
500 I C /I B =40
Tc=100 C
DC CURRENT GAIN h FE
300 -1
VOLTAGE V CE(sat) (V)
Tc=25 C
Tc=-25 C -0.5
100 -0.3
C
50 00
=1
Tc Tc=25 C
30 -0.1
COMMON EMITTER Tc=-25 C
VCE =-2V -0.05
10 -0.03
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 -0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
Pc - Ta SAFE OPERATING AREA
COLLECTOR POWER DISSIPATION P C (W)
1.6 -20
I C MAX.(PULSED) **
COLLECTOR CURRENT I C (A)
1.4 -10 10
m
I C MAX. S* 100mS*
1.2 -5
(CONTINUOUS)
-3 D
1.0 O C
Tc PER
=2 AT
5
0.8 C ION
Ta
=2
-1
0.6 5
C * SINGLE PULSE Tc=25 C
VCEO MAX.
-0.5 ** PULSE WIDTH=10ms(MAX)
0.4 DUTY CYCLE=30%(MAX)
-0.3 CURVES MUST BE DERATED
0.2 LINEARLY WITH INCREASE
IN TEMPERATURE
0 -0.1
0 20 40 60 80 100 120 140 160 -0.3 -0.5 -1 -3 -5 -10 -30 -50
AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 3. 27 Revision No : 4 2/2
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