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SEMICONDUCTOR KTA1267
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION
SWITCHING APPLICATION.
B
FEATURES
/Excellent hFE Linearity
A
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). O DIM MILLIMETERS
F
A 3.20 MAX
Low Noise : NF=1dB(Typ.), 10dB(Max.). H M B 4.30 MAX
Complementary to KTC3199. C 0.55 MAX
G
D _
2.40 + 0.15
E 1.27
F 2.30
C _
G 14.00+ 0.50
H 0.60 MAX
J 1.05
E E
MAXIMUM RATING (Ta=25 ) K 1.45
L 25
J
CHARACTERISTIC SYMBOL RATING UNIT M 0.80
D
K
1 2 3 N N 0.55 MAX
O 0.75
Collector-Base Voltage VCBO -50 V L
Collector-Emitter Voltage VCEO -50 V 1. EMITTER
2. COLLECTOR
Emitter-Base Voltage VEBO -5 V
3. BASE
Collector Current IC -150 mA
Emitter Current IE 150 mA
TO-92M
Collector Power Dissipation PC 400 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
DC Current Gain hFE (Note) VCE=-6V, IC=-2mA 70 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1mA 80 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 7.0 pF
Noise Figure NF VCE=-6V, IC=-0.1mA, f=1kHz, Rg=10k - 1.0 10 dB
Note : hFE Classification O:70 140 , Y:120 240 , GR:200 400
2002. 9. 12 Revision No : 2 1/2
KTA1267
2002. 9. 12 Revision No : 2 2/2
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