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SEMICONDUCTOR KTA1385D/L
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
A I
FEATURES
C J
DIM MILLIMETERS
High Power Dissipation : PC=1.3W(Ta=25 )
D
A _
6.60 + 0.2
B _
6.10 + 0.2
Complementary to KTC5103D/L C _
5.0 + 0.2
_
B
D 1.10 + 0.2
E _
2.70 + 0.2
F _
2.30 + 0.1
M
H 1.00 MAX
Q
K
E
I _
2.30 + 0.2
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
L _
0.50 + 0.10
MAXIMUM RATING (Ta=25 ) F F L
M _
0.91+ 0.10
_
O 0.90 + 0.1
1 2 3 _
CHARACTERISTIC SYMBOL RATING UNIT P
Q
1.00 + 0.10
0.95 MAX
Collector-Base Voltage VCBO -60 V 1. BASE
2. COLLECTOR
Collector-Emitter Voltage VCEO -60 V 3. EMITTER
Emitter-Base Voltage VEBO -7 V
DC IC -5 DPAK
Collector Current A
Pulse * ICP -8
Base Current IB -1 A A I
C J
Collector Power Ta=25 1.0
PC
D
W
Dissipation Tc=25 15
B
DIM MILLIMETERS
A _
6.60 + 0.2
Junction Temperature Tj 150 B _
6.10 + 0.2
_ 0.2
Q
5.0 +
K
C
D _
1.10 + 0.2
Storage Temperature Range Tstg -55 150 H P
E _
9.50 + 0.6
E
G F _
2.30 + 0.1
_
* PW 10ms, Duty Cycle 50% G
H
0.76 + 0.1
1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _ 0.2
K 2.0 +
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -10 A
Emitter Cut-off Current IEBO VEB=-7V, IC=0 - - -10 A
hFE 1 VCE=-1V, IC=-0.1A 60 - -
DC Current Gain * hFE2 (Note) VCE=-1V, IC=-2A 160 - 400
hFE 3 VCE=-2V, IC=-5A 50 - -
Collector-Emitter Saturation Voltage * VCE(sat) IC=-2A, IB=-0.2A - -0.14 -0.3 V
Base-Emitter Saturation Voltage * VBE(sat) IC=-2A, IB=-0.2A - -0.9 -1.2 V
OUTPUT
Turn On Time ton - 0.15 1
I B2 I B1
0
INPUT
Switching IB1
5
Storage Time tstg I B2
- 0.78 2.5 S
Time
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