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SEMICONDUCTOR KTA2013F
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
E
Excellent hFE Linearity
B
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
High hFE : hFE=120~400.
Complementary to KTC4074F. 2 DIM MILLIMETERS
A
G
D
A _
0.6 + 0.05
Thin Fine Pitch Small Package. 3 _
K
B 0.8 + 0.05
1 C 0.38+0.02/-0.04
D _
0.2 + 0.05
E _
1.0 + 0.05
G _
0.35+ 0.05
J _
0.1 + 0.05
_
MAXIMUM RATING (Ta=25 ) K 0.15 + 0.05
C
CHARACTERISTIC SYMBOL RATING UNIT
J
Collector-Base Voltage VCBO -20 V
1. EMITTER
Collector-Emitter Voltage VCEO -20 V 2. BASE
Emitter-Base Voltage VEBO -5 V 3. COLLECTOR
Collector Current IC -150 mA
TFSM
Base Current IB -30 mA
Collector Power Dissipation PC 50 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking Type Name
F h FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-20V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
DC Current Gain hFE (Note) VCE=-5V, IC=-2mA 120 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1mA 80 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4 7 pF
Note : hFE Classification Y(4):120 240, GR(6):200 400
2005. 4. 21 Revision No : 1 1/3
KTA2013F
2005. 4. 21 Revision No : 1 2/3
KTA2013F
2005. 4. 21 Revision No : 1 3/3
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