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SEMICONDUCTOR KTA501E
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
B1
FEATURES
A super-minimold package houses 2 transistor.
Excellent temperature response between these 2 transistor. 1 5 DIM MILLIMETERS
C
A _
1.6 + 0.05
High pairing property in hFE.
A1
A
A1 _
1.0 + 0.05
2
C
The follwing characteristics are common for Q1, Q2. B _
1.6 + 0.05
B1 _
1.2+ 0.05
D
3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
P P J _
0.12 + 0.05
P 5
MAXIMUM RATING (Ta=25 )
H
CHARACTERISTIC SYMBOL RATING UNIT
J
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V 1. Q 1 BASE
2. Q 1, Q 2 EMITTER
3. Q 2 BASE
Emitter-Base Voltage VEBO -5 V 4. Q 2 COLLECTOR
5. Q 1 COLLECTOR
Collector Current IC -150 mA
Base Current IB -30 mA
TESV
Collector Power Dissipation PC * 200 mW
Junction Temperature Tj 150
EQUIVALENT CIRCUIT (TOP VIEW)
Storage Temperature Range Tstg -55 150
5 4
* Total Rating
Q1 Q2
1 2 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1
DC Current Gain hFE (Note) VCE=-6V, IC=-2 120 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=-100 , IB=-10 - -0.1 -0.30 V
Transition Frequency fT VCE=-10V, IC=-1 80 - -
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 4 7
Noise Figure NF VCE=-6V, IC=-0.1 , f=1 , Rg=10 - 1.0 10
Note : hFE Classification Y(4):120 240, GR(6):200 400
Marking 5 4
Lot No.
Type Name
S4
1 2 3
2008. 9. 23 Revision No : 3 1/3
KTA501E
I C - VCE h FE - I C
-240 3k
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
I B =-2.0mA
Ta=25 C COMMON EMITTER
-200
DC CURRENT GAIN h FE
I B =-1.5mA
1k
-160
I B =-1.0mA 500
-120 300 Ta=100 C VCE =-6V
I B =-0.5mA Ta=25 C
-80
Ta=-25 C
I B =-0.2mA 100 VCE =-1V
-40
50
I B =0mA
0 30
0 -1 -2 -3 -4 -5 -6 -7 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
COLLECTOR-EMITTER SATURATION
-1 -10
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
-0.5 I C /I B =10 -5 I C/I B=10
VOLTAGE VBE(sat) (V)
Ta=25 C
VOLTAGE VCE(sat) (V)
-0.3 -3
C
-0.1 00 -1
=1
Ta
-0.05 -0.5
-0.03 Ta=25 C
-0.3
Ta=-25 C
-0.01 -0.1
-0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
fT - IC I B - V BE
3k -1k
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER COMMON EMITTER
VCE =-10V
Ta=25 C -300 VCE =-6V
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