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kta501u


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                                    SEMICONDUCTOR                                                                                              KTA501U
                                             TECHNICAL DATA                                                           EPITAXIAL PLANAR PNP TRANSISTOR


  GENERAL PURPOSE APPLICATION.
  SWITCHING APPLICATION.
                                                                                                                                            B
  FEATURES                                                                                                                                  B1

    A super-minimold package houses 2 transistor.
                                                                                                                                  1                      5                   DIM      MILLIMETERS
    Excellent temperature response between these 2 transistor.                                                                                                                A              _
                                                                                                                                                                                        2.00 + 0.20




                                                                                                                              C
                                                                                                                         A1
                                                                                                                                  2                                           A1            _
                                                                                                                                                                                        1.3 + 0.1




                                                                                                                     A
    High pairing property in hFE.




                                                                                                                              C
                                                                                                                                                                              B              _
                                                                                                                                                                                         2.1 + 0.1
                                                                                                                                  3                      4       D                           _
    The follwing characteristics are common for Q1, Q2.                                                                                                                      B1         1.25 + 0.1
                                                                                                                                                                             C               0.65
                                                                                                                                                                              D        0.2+0.10/-0.05
                                                                                                                                                                              G             0-0.1
                                                                                                                                                                              H                _
                                                                                                                                                                                           0.9 + 0.1
                                                                                                                                                                              T        0.15+0.1/-0.05




                                                                                                                              H
                                                                                                                                                                 T

  MAXIMUM RATING (Ta=25                  )
                                                                                                                                           G
         CHARACTERISTIC                  SYMBOL              RATING              UNIT
   Collector-Base Voltage                    VCBO                   -50                 V                                         1. Q 1 BASE
                                                                                                                                  2. Q 1, Q 2 EMITTER
   Collector-Emitter Voltage                 VCEO                   -50                 V                                         3. Q 2 BASE
                                                                                                                                  4. Q 2 COLLECTOR
   Emitter-Base Voltage                      VEBO                    -5                 V                                         5. Q 1 COLLECTOR


   Collector Current                          IC                -150              mA
   Base Current                               IB                    -30           mA
                                                                                                                                                             USV
   Collector Power Dissipation               PC *                200                    W
   Junction Temperature                       Tj                 150               



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