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SEMICONDUCTOR KTB1260
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES A
C
1W (Mounted on Ceramic Substrate).
H
Small Flat Package. G
Complementary to KTD1898.
B
J
E
DIM MILLIMETERS
A 4.70 MAX
D D B _
2.50 + 0.20
K C 1.70 MAX
MAXIMUM RATING (Ta=25 ) F F
D 0.45+0.15/-0.10
E 4.25 MAX
_
CHARACTERISTIC SYMBOL RATING UNIT F 1.50 + 0.10
G 0.40 TYP
VCBO H 1.75 MAX
Collector-Base Voltage -80 V 1 2 3
J 0.75 MIN
K 0.5+0.10/-0.05
Collector-Emitter Voltage VCEO -80 V
Emitter-Base Voltage VEBO -5 V 1. BASE
2. COLLECTOR (HEAT SINK)
Collector Current IC -1 A
3. EMITTER
Emitter Current IE 1 A
PC 500 mW
Collector Power Dissipation
PC* 1 W SOT-89
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Mounted on ceramic substrate(250mm 2
0.8t)
Marking
h FE Rank Lot No.
Type Name
Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-60V, IE=0 - - -1 A
Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -80 - - V
DC Current Gain hFE(Note) VCE=-3V, IC=-100mA 70 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.4 V
Transition Frequency fT VCE=-5V, IC=-50mA, f=30MHz - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 25 - pF
Note : hFE Classification O:70 140, Y:120 240, GR:200 400
2003. 12. 12 Revision No : 2 1/3
KTB1260
I C - VBE I C - VCE
-1K
Ta=25 C Ta=25 C
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
VCE =-5V
-1.0
-0.45mA
-100 -0.8 -0.4mA
-0.35mA
-0.6 -0.3mA
-10 -0.25mA
-0.4 -0.2mA
-0.15mA
-1 -0.1mA
-0.2
-0.05mA
IB =0mA
-0.1 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - I C V CE(sat) - IC
1K
Ta=25 C
DC CURRENT GAIN h FE
500
COLLECTOR SATURATION
-2
VOLTAGE VCE(sat) (V)
-1
200
-0.5
VCE =-3V
100
-0.2
I C /I B =20
50 -0.1
VCE =-1V
-0.05 IC /I B =10
20
-0.02
10 -0.01
-1 -2 -5 -10 -20 -50 -100 -200 -500 -1K -2K -1 -2 -5 -10 -20 -50 -100 -200 -500 -1K -2K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
f T - IE C ob - VCB
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
1K 1K
TRANSITION FREQUENCY f T (MHz)
Ta=25 C Ta=25 C
500 VCE =-5V 500 f=1MHz
I E =0A
200 200
100 100
50 50
20 20
10 10
5 5
2 2
1 1
1 2 5 10 20 50 100 200 500 1K -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
EMITTER CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V)
2003. 12. 12 Revision No : 0 2/3
KTB1260
SAFE OPERATING AREA Pc - Ta
COLLECTOR POWER DISSIPATION Pc (W)
-3 1.2
I C (Pulse) MAX. *
1 MOUNTED ON CERAMIC
1 SUBSTRATE
-1 1.0
COLLECTOR CURRENT I C (A)
I C MAX. Pw (250mm 2 x0.8t)
(CONTINUOUS) 10 =1 2 Ta=25 C
0m 0m
-300m S* s* 0.8
DC
OP
ER
-100m AT 0.6
IO 2
N
-30m 0.4
* SINGLE NONREPETITVE
-10m 0.2
PULSE Ta=25 C
CURVES MUST BE DERATED
-3m 0
LINEARLY WITH INCREASE
0 20 40 60 80 100 120 140 160
IN TEMPERATURE
-1m AMBIENT TEMPERATURE Ta ( C)
-0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 12. 12 Revision No : 0 3/3
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