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SEMICONDUCTOR KTB1367
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
A C
FEATURES
DIM MILLIMETERS
F
Low Collector-Emitter Saturation Voltage S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
: VCE(sat)=-2.0V(Max.). E
C _
2.70 + 0.3
B
Complementary to KTD2059. D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
MAXIMUM RATING (Ta=25 ) M
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
J
CHARACTERISTIC SYMBOL RATING UNIT D D N _
2.54 + 0.1
P _
6.8 + 0.1
Collector-Base Voltage VCBO -100 V Q _
4.5 + 0.2
R _
2.6 + 0.2
N N H
Collector-Emitter Voltage VCEO -100 V S 0.5 Typ
Emitter-Base Voltage VEBO -5 V
Collector Current IC -5 A 1. BASE
Q
1 2 3
2. COLLECTOR
Base Current IB -0.5 A 3. EMITTER
Collector Power Dissipation (Tc=25 ) PC 30 W
Junction Temperature Tj 150 TO-220IS
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -100 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -100 - - V
hFE(1) (Note) VCE=-5V, IC=-1A 40 - 240
DC Current Gain
hFE(2) VCE=-5V, IC=-4A 20 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-4A, IB=-0.4A - - -2.0 V
Base-Emitter Voltage VBE VCE=-5V, IC=-4A - - -1.5 V
Transition Frequency fT VCE=-5V, IC=-1A - 5.0 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 270 - pF
Note : hFE(1) Classification R:40 80, O:70 140, Y:120 240
2007. 5. 21 Revision No : 2 1/2
KTB1367
I C - V CE VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
-5 2
-250 -200 -150 COMMON EMITTER
COLLECTOR CURRENT I C (A)
-100 I C /I B =10
1
-4
VOLTAGE VCE(sat) (V)
-0.5
-3 -50
-0.3
C
=75
-2 IB =-20mA Tc
-0.1
Tc=25 C
-1
COMMON EMITTER Tc=-25 C
-0.05
Tc=25 C
0
0 -0.03
0 -1 -2 -3 -4 -5 -6 -7 -0.01 -0.03 -0.1 -0.3 -1 -3 -5
COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A)
h FE - I C SAFE OPERATING AREA
500 -20
I C MAX(PULSED)
300 -10
COLLECTOR CURRENT I C (A)
DC CURRENT GAIN hFE
Tc=75 C I C MAX
(CONTINUOUS)
1m
Tc=25 C -5
10 s
s
10
1s
ms
0m
100 -3 DC
Tc=-25 C O
(T PE
50 c= RA
25 T
C) ION
30 -1
COMMON EMITTER
VCE =-5V -0.5
VCEO MAX.
SINGLE NONREPETITIVE
-0.3 PULSE Tc=25 C
10
CURVES MUST BE DERATED
-0.01 -0.03 -0.1 -0.3 -1 -3 -5
LINEARLY WITH INCREASE
IN TEMPERATURE
COLLECTOR CURRENT I C (A) -0.1
-3 -10 -30 -100 -200
COLLECTOR-EMITTER VOLTAGE V CE (V)
Pc - Ta
COLLECTOR POWER DISSIPATION PC (W)
50
Tc=Ta
INFINITE HEAT SINK
40
30
20
10
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
2007. 5. 21 Revision No : 2 2/2
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