Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC ktb2510
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SEMICONDUCTOR KTB2510
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH POWER AMPLIFIER
A Q B
DARLINGTON APPLICATION. K
F
I
FEATURES
E
Complementary to KTD1510
C
DIM MILLIMETERS
Recommended for 60W Audio Amplifier Output Stage. A 15.9 MAX
J
H
B 4.8 MAX
C _
20.0 + 0.3
G
D _
2.0 + 0.3
D d 1.0+0.3/-0.25
E 2.0
L
F 1.0
MAXIMUM RATING (Ta=25 ) d
G 3.3 MAX
H 9.0
CHARACTERISTIC SYMBOL RATING UNIT I 4.5
P P T M J 2.0
Collector-Base Voltage VCBO -160 V K 1.8 MAX
L _
20.5 + 0.5
Collector-Emitter Voltage VCEO -150 V M 2.8
P _
5.45 + 0.2
Emitter-Base Voltage VEBO -5 V 1 2 3 Q 3.2 + 0.2
_
T 0.6+0.3/-0.1
1. BASE
Collector Current IC -10 A
2. COLLECTOR (HEAT SINK)
Base Current IB -1 A 3. EMITTER
Collector Power Dissipation (Tc=25 ) PC 100 W
Junction Temperature Tj 150 TO-3P(N)
Storage Temperature Range Tstg -55 150
EQUIVALENT CIRCUIT
EMITTER
70
BASE
COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -100 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-30mA, IB=0 -150 - - V
DC Current Gain hFE VCE=-4V, IC=-7A 5000 12000 20000
Collector-Emitter Saturation Voltage VCE(sat) IC=-7A, IB=-7mA - - -2.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-7A, IB=-7mA - - -3.0 V
Transition Frequency fT VCE=-12V, IC=-2A - 50 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 230 - pF
2008. 4. 18 Revision No : 2 1/3
KTB2510
2008. 4. 18 Revision No : 2 2/3
KTB2510
2008. 4. 18 Revision No : 2 3/3
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