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SEMICONDUCTOR KTB688
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A Q B
K
F
FEATURES
I
Complementary to KTD718.
E
Recommended for 45 50W Audio Frequency
C
DIM MILLIMETERS
Amplifier Output Stage. A 15.9 MAX
J
H
B 4.8 MAX
C _
20.0 + 0.3
G
D _
2.0 + 0.3
D d 1.0+0.3/-0.25
E 2.0
L
F 1.0
MAXIMUM RATING (Ta=25 ) d
G 3.3 MAX
H 9.0
CHARACTERISTIC SYMBOL RATING UNIT I 4.5
P P T M J 2.0
Collector-Base Voltage VCBO -120 V K 1.8 MAX
L _
20.5 + 0.5
Collector-Emitter Voltage VCEO -120 V M 2.8
P _
5.45 + 0.2
Emitter-Base Voltage VEBO -5 V 1 2 3 Q 3.2 + 0.2
_
T 0.6+0.3/-0.1
1. BASE
Collector Current IC -10 A
2. COLLECTOR
Base Current IB -1 A 3. EMITTER
Collector Power Dissipation (Tc=25 ) PC 80 W
Junction Temperature Tj 150 TO-3P(N)
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-120V, IE=0 - - -10 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -10 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -120 - - V
DC Current Gain hFE (Note) VCE=-5V, IC=-1A 55 - 160
Collector-Emitter Saturation Voltage VCE(sat) IC=-5A, IB=-0.5A - - -2.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-5A - - -1.5 V
Transition Frequency fT VCE=-5V, IC=-1A - 10 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 280 - pF
Note : hFE Classification R:55 110, O:80 160
1997. 1. 25 Revision No : 0 1/2
KTB688
IC - VCE Pc - Ta
COLLECTOR POWER DISSIPATION PC (W)
-10 100
COLLECTOR CURRENT IC (A)
COMMON EMITTER 1 Ta=Tc
Tc=25 C 1 INFINITE HEAT SINK
mA
A
0 80 2 300x300x2mm Al
0m
-8 -30 -200mA
0
HEAT SINK
-4
3 200x200x2mm Al
-6 60 HEAT SINK
-100mA 4 100x100x2mm Al
2 HEAT SINK
-4 40 3
-50mA 5 NO HEAT SINK
I B =-20mA 4
-2 20
0mA 5
0 0
0 -2 -4 -6 -8 -10 -12 -14 0 40 80 120 160 200 240
COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( C)
VCE(sat) - IC SAFE OPERATING AREA
COLLECTOR-EMITTER SATURATION
-5 -30
-3 COMMON EMITTER I C MAX(PULSED) t=1ms
t=10ms
VOLTAGE VCE(sat) (V)
I C/I B =10
COLLECTOR CURRENT IC (A)
I C MAX(CONTINUOUS) t=100ms
-1 -10 t=500ms
DC
-0.5 O
-5 Tc PE
-0.3 C =2 RA
0 5 TI
=10 -3 C ON
Tc
-0.1 Tc=25 C
Tc=-25 C
-0.05 -1
-0.03
-0.5 SINGLE NONREPETITIVE
VCEO MAX
PULSE Tc=25 C
-0.01 -0.3 CURVES MUST BE DERATED
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 LINEARLY WITH INCREASE
IN TEMPERATURE
-0.1
COLLECTOR CURRENT IC (A)
-1 -3 -10 -30 -100 -300
COLLECTOR EMITTER VOLTAGE VCE (V)
hFE - IC
1k
COMMON EMITTER
DC CURRENT GAIN hFE
500 VCE =-5V
300
Tc=100 C
Tc=25 C
100 Tc=-25 C
50
30
10
-0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
1997. 1. 25 Revision No : 0 2/2
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