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                                  SEMICONDUCTOR                                                          KTC1815
                                           TECHNICAL DATA                                EPITAXIAL PLANAR NPN TRANSISTOR


  GENERAL PURPOSE APPLICATION.
  SWITCHING APPLICATION.

  FEATURES
    Excellent hFE Linearity
      : hFE(2)=100(Typ.) at VCE=6V, IC=150mA
      : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
    Low Noise : NF=1dB(Typ.). at f=1kHz.
    Complementary to KTA1015.




  MAXIMUM RATING (Ta=25                )
          CHARACTERISTIC                   SYMBOL          RATING    UNIT
   Collector-Base Voltage                   VCBO             60       V
   Collector-Emitter Voltage                VCEO             50       V
   Emitter-Base Voltage                     VEBO              5       V
   Collector Current                          IC             150     mA
   Base Current                               IB             50      mA
   Collector Power Dissipation                PC             625     mW
   Junction Temperature                       Tj             150
   Storage Temperature Range                 Tstg          -55 150




  ELECTRICAL CHARACTERISTICS (Ta=25 )
              CHARACTERISTIC                  SYMBOL                  TEST CONDITION                MIN.   TYP.   MAX.   UNIT
   Collector Cut-off Current                       ICBO       VCB=60V, IE=0                          -      -      0.1    A
   Emitter Cut-off Current                         IEBO       VEB=5V, IC=0                           -      -      0.1    A
                                            hFE(1) (Note)     VCE=6V, IC=2mA                         70     -     700
   DC Current Gain
                                               hFE(2)         VCE=6V, IC=150mA                       25    100      -
   Collector-Emitter Saturation Voltage        VCE(sat)       IC=100mA, IB=10mA                      -     0.1    0.25    V
   Base-Emitter Saturation Voltage             VBE(sat)       IC=100mA, IB=10mA                      -      -      1.0    V
   Transition Frequency                             fT        VCE=10V, IC=1mA                        80     -       -    MHz
   Collector Output Capacitance                     Cob       VCB=10V, IE=0, f=1MHz                  -     2.0     3.5    pF
   Base Intrinsic Resistance                        rbb'      VCB=10V, IE=1mA, f=30MHz               -      50      -
   Noise Figure                                     NF        VCE=6V, IC=0.1mA, Rg=10k   , f=1kHz    -     1.0     10     dB
  Note : hFE(1) Classification   Y:120 240,    GR:200 400




2005. 3. 22                      Revision No : 0                                                                                1/3
                                KTC1815




2005. 3. 22   Revision No : 0             2/3
                                KTC1815




2005. 3. 22   Revision No : 0             3/3

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