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SEMICONDUCTOR KTC2800
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION. A
B D
FEATURES C
E
High Transition Frequency : fT=100MHz(Typ.).
F
Complementary to KTA1700.
G
H
DIM MILLIMETERS
J
MAXIMUM RATING (Ta=25 ) A 8.3 MAX
K L B 5.8
CHARACTERISTIC SYMBOL RATING UNIT C 0.7
D _
3.2 + 0.1
E 3.5
Collector-Base Voltage VCBO 160 V _
F 11.0 + 0.3
G 2.9 MAX
Collector-Emitter Voltage VCEO 160 V M
H 1.0 MAX
J 1.9 MAX
Emitter-Base Voltage VEBO 5 V O K _
0.75 + 0.15
N P
1 2 3 L _
15.50 + 0.5
Collector Current IC 1.5 A M _
2.3 + 0.1
N _
0.65 + 0.15
Base Current IB 1.0 A 1. EMITTER O 1.6
2. COLLECTOR P 3.4 MAX
Collector Power Ta=25 1.5 3. BASE
PC W
Dissipation Tc=25 10
Junction Temperature Tj 150 TO-126
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=160V, IE=0 - - 1.0 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1.0 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 160 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5.0 - - V
DC Current Gain hFE(Note) VCE=5V, IC=100mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 1.5 V
Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 V
Transition Frequency fT VCE=10V, IC=100mA - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 25 - pF
Note: hFE Classification O:70 140 , Y:120 240
2003. 7. 24 Revision No : 2 1/3
KTC2800
I C - VCE hFE - I C
1.0 300
COMMON
A A Tc=100 C
8m
COLLECTOR CURRENT I C (A)
m
mA
12 6mA EMITTER
20
DC CURRENT GAIN h FE
0.8 Tc=25 C Tc=25 C
100
0.6 4mA Tc=-25 C
50
0.4
I B =2mA
30
COMMON EMITTER
0.2
VCE =5V
0mA
0 10
0 2 4 6 8 10 12 14 16 0.003 0.01 0.03 0.1 0.3 1 3
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A)
V CE(sat) - I C I C - V BE
1
COLLECTOR-EMITTER SATURATION
1.0
COMMON EMITTER COMMON
COLLECTOR CURRENT I C (A)
I C /I B =10 EMITTER
0.5 0.8
VOLTAGE VCE(sat) (V)
VCE =5V
0.3
0.6
Tc=100 C
Tc=-25 C
Tc=25 C
C
100
Tc= Tc=25 C
0.4
Tc=-25 C
0.1
0.2
0.05
0.03 0
0.003 0.01 0.03 0.1 0.3 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE VBE (V)
f T - IC Pc - Ta
COLLECTOR POWER DISSIPAZTION P C (W)
300 30
TRANSITION FREQUENCY f T (MHz)
1 Tc=Ta
INFINITE HEAT SINK
25 2 NO HEAT SINK
100 20
50 15
1
30 10
COMMON EMITTER
VCE =10V
5
Tc=25 C 2
0 0
5 10 30 100 300 1k 0 20 40 60 80 100 120 140 160 180
COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)
2003. 7. 24 Revision No : 2 2/3
KTC2800
SAFE OPERATING AREA
5
I C MAX(PULSED) SINGLE NONRE-
3 PETITIVE
I C MAX PULSE Tc=25 C
COLLECTOR CURRENT I C (A)
(CONTINUOUS)
1.5
1
1m
DC 10
0.5 S/B
s
ms
10
0m
LI
M
s
0.3 IT
ED
0.1
CURVES MUST BE
0.05 DERATED LINEARLY
WITH INCREASE
IN TEMPERATURE
0.02
5 10 30 50 100 300
COLLECTOR-EMITTER VOLTAGE V CE (V)
2003. 7. 24 Revision No : 2 3/3
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