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SEMICONDUCTOR KTC2803
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
AUDIO FREQUENCY, HIGH FREQUENCY A
POWER AMPLIFIER B D
C
E
FEATURES
F
Complementary to KTA1704.
G
H
DIM MILLIMETERS
J
MAXIMUM RATING (Ta=25 ) A 8.3 MAX
K L B 5.8
CHARACTERISTIC SYMBOL RATING UNIT C 0.7
D _
3.2 + 0.1
E 3.5
Collector-Base Voltage VCBO 120 V _
F 11.0 + 0.3
G 2.9 MAX
Collector-Emitter Voltage VCEO 120 V M
H 1.0 MAX
J 1.9 MAX
Emitter-Base Voltage VEBO 5 V O K _
0.75 + 0.15
N P
1 2 3 L _
15.50 + 0.5
Collector DC IC 1.2 M _
2.3 + 0.1
A N _
0.65 + 0.15
Current Pulse (Note1) ICP 2.5 1. EMITTER O 1.6
2. COLLECTOR P 3.4 MAX
Base Current IB 0.3 A 3. BASE
Collector Power Ta=25 1.5
PC W
Dissipation Tc=25 20 TO-126
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Note 1 : Pulse Width 10mS, Duty Cycle 50%
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut of Current ICBO VCB=50V, IE=0 - - 1 A
Emitter Cut of Current IEBO VEB=4V, IC=0 - - 1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 120 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 120 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5 - - V
hFE(1) Note VCE=5V, IC=50mA 100 - 320
DC Current Gain
hFE(2) VCE=5V, IC=500mA 20 - -
Gain Bandwidth Product fT VCE=10V, IC=50mA - 110 - MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 30 - pF
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - 0.15 0.4 V
Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA - 0.85 1.2 V
(Note) : hFE(1) Classification Y:100 200, GR:160 320
2003. 7. 24 Revision No : 4 1/2
KTC2803
I C - V CE h FE - I C
1.6 1k
COMMON COMMON
1.4 EMITTER EMITTER
COLLECTOR CURRENT I C (A)
500
Ta=25 C Ta=25 C
300
DC CURRENT GAIN h FE
1.2 9mA
8mA
A
1.0 7mA 6mA
10m
5mA
0.8 4mA VCE =5V
100
0.6 3mA 50
0.4 30
2mA
I B =1mA
0.2
0 10
0 10 20 30 40 50 60 70 80 0.001 0.01 0.1 1 10
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A)
VCE(sat) - I C ,VBE(sat) - IC C ob - V CB
10 1k
COMMON I E =0
5 EMITTER f=1MHz
300
SATURATION VOLTAGE
3 I C /IB =5 Tc=25 C
OUTPUT CAPACITANCE
VCE(sat) ,VBE(sat) (V)
1 VBE(sat) 100
C ob (pF)
0.5
0.3 30
0.1 10
0.05 VCE(sat)
0.03 3
0.01 1
0.001 0.01 0.1 1 10 1 3 10 30 100 300 1k
COLLECTOR CURRENT IC (A) COLLECTOR-BASE VOLTAGE VCB (V)
f T - IC
1k
COMMON
500 EMITTER
TRANSITION FREQUENCY
VCE =5V
300 Tc=25 C
f T (MHz)
100
50
30
10
0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT I C (A)
2003. 7. 24 Revision No : 4 2/2
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