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SEMICONDUCTOR KTC2815D/L
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
A I
C J
FEATURES DIM MILLIMETERS
D
A _
6.60 + 0.2
Low Collector Saturation Voltage B _
6.10 + 0.2
C _ 0.2
5.0 +
: VCE(sat)=0.5V(Max.) (IC=1A) D _
1.10 + 0.2
B
E _
2.70 + 0.2
_
High Speed Switching Time : tstg=1 S(Typ.) F
H
2.30 + 0.1
1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
Complementary to KTA1718D/L.
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
O _
0.90 + 0.1
1 2 3 _
P 1.00 + 0.10
Q 0.95 MAX
MAXIMUM RATING (Ta=25 ) 1. BASE
2. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT 3. EMITTER
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V DPAK
Emitter-Base Voltage VEBO 5 V
Collector Current IC 2 A A I
C J
Emitter Current IE -2 A
D
Collector Power Ta=25 1.0 DIM MILLIMETERS
PC
B
W A _
6.60 + 0.2
Dissipation Tc=25 10 B _
6.10 + 0.2
_
5.0 + 0.2
Q
C
K
D _
1.10 + 0.2
Junction Temperature Tj 150 H P
E _
9.50 + 0.6
G _
E
F 2.30 + 0.1
Storage Temperature Range Tstg -55 150 G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _
K 2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 50 - - V
hFE(1) (Note) VCE=2V, IC=0.5A 70 - 240
DC Current Gain
hFE2 VCE=2V, IC=1.5A 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=0.05A - - 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=0.05A - - 1.2 V
Transition Frequency fT VCE=2V, IC=0.5A - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 30 - pF
OUTPUT
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