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SEMICONDUCTOR KTC2825D
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LED DRIVE APPLICATION
FEATURES
A H
Adoption of MBIT processes.
C J
Low collector-to-emitter saturation voltage.
DIM MILLIMETERS
D
Fast switching speed. A _
6.6 + 0.2
B _
6.1 + 0.2
C _
5.0 + 0.2
_
B
D 1.1 + 0.2
E _
2.7 + 0.2
F _
2.3 + 0.1
M G 1.0 MAX
_
2.3 + 0.2
E
H
N
J _
0.5 + 0.1
G K K _
1.0 + 0.1
L _
0.5 + 0.1
F F L
M 0.95 MAX
MAXIMUM RATING (Ta=25 ) 1 2 3
N _
0.9 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V 1. BASE
2. COLLECTOR
Vollector-Emitter Voltage VCEO 60 V 3. EMITTER
Emitter-Base Voltage VEBO 6 V
Collector Current IC 3 A
DPAK
Collector Current(Pulse) ICP 6 A
Base Current IB 600 mA
Ta=25 PC 1 W
Collector Power Dissipation
TC=25 PC 15 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 1
hFE(1) VCE=2V, IC=100 200 - 400
DC Current Gain
hFE (2) VCE=2V, IC=3A 35 - -
VCE(sat) (1) IC=2A, IB=100 - 0.19 0.5
Collector-Emitter Saturation Voltage V
VCE(sat) (2) IC=360 , IB=2 - - 0.3
Base-Emitter Saturation Voltage VBE(sat) IC=2A, IB=100 - 0.94 1.2 V
Collector Output Capacitance Cob VCB=10V, f=1 , IE=0 - 25 -
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