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SEMICONDUCTOR KTC2875
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
FOR MUTING AND SWITCHING APPLICATION.
E
FEATURES
L B L
High Emitter-Base Voltage : VEBO=25V(Min.) DIM MILLIMETERS
A _
2.93 + 0.20
High Reverse hFE B 1.30+0.20/-0.15
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-2mA) C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
A
G
Low on Resistance : RON=1 (Typ.), (IB=5mA) E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
MAXIMUM RATING (Ta=25 ) N 1.00+0.20/-0.10
N
C
P 7
J
CHARACTERISTIC SYMBOL RATING UNIT Q 0.1 MAX
K
M
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 20 V 1. EMITTER
2. BASE
Emitter-Base Voltage VEBO 25 V
3. COLLECTOR
Collector Current IC 300 mA
Base Current IB 60 mA
Collector Power Dissipation PC 150 mW
SOT-23
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=25V, IC=0 - - 0.1 A
DC Current Gain (Note) hFE VCE=2V, IC=4mA 200 - 1200
Collector-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=3mA - 0.042 0.3 V
Base-Emitter Voltage VBE VCE=2V, IC=4mA - 0.61 - V
Transition Frequency fT VCE=6V, IC=4mA - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 7 pF
Turn-on Time ton - 160 -
Switching
Storage Time tstg - 500 - nS
Time
Fall Time tf - 130 -
Note : hFE Classification A: 200~700, B: 350 1200
2009. 3. 12 Revision No : 3 1/3
KTC2875
2009. 3. 12 Revision No : 3 2/3
KTC2875
2009. 3. 12 Revision No : 3 3/3
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