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SEMICONDUCTOR KTC2876
SILICON NPN TRANSISTOR
TECHNICAL DATA EPITAXIAL PLANAR TYPE
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
B
High Emitter-Base Voltage : VEBO=25V(Min.)
High Reverse hFE
A
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
O DIM MILLIMETERS
F
Low on Resistance : RON=1 (Typ.), (IB=5mA) A 3.20 MAX
H M B 4.30 MAX
C 0.55 MAX
G
D _
2.40 + 0.15
E 1.27
F 2.30
C _
G 14.00+ 0.50
MAXIMUM RATING (Ta=25 ) H 0.60 MAX
J 1.05
E E
CHARACTERISTIC SYMBOL RATING UNIT K 1.45
L 25
VCBO
J
Collector-Base Voltage 50 V M 0.80
D
K
1 2 3 N N 0.55 MAX
Collector-Emitter Voltage VCEO 20 V O 0.75
L
Emitter-Base Voltage VEBO 25 V 1. EMITTER
2. COLLECTOR
Collector Current IC 300 mA 3. BASE
Base Current IB 60 mA
Collector Power Dissipation PC 400 mW TO-92M
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=25V, IC=0 - - 0.1 A
DC Current Gain (Note) hFE * VCE=2V, IC=4mA 200 - 1200
Collector-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=3mA - 0.042 0.1 V
Base-Emitter Voltage VBE VCE=2V, IC=4mA - 0.61 - V
Transition Frequency fT VCE=6V, IC=4mA - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 7 pF
Turn-on Time tON - 160 -
Switching
Storage Time tstg - 500 - nS
Time
Fall Time tf - 130 -
*Note) : hFE Classification A:200~700, B: 350 1200, C: 700 1200
2007. 5. 23 Revision No : 1 1/3
KTC2876
2007. 5. 23 Revision No : 1 2/3
KTC2876
2007. 5. 23 Revision No : 1 3/3
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