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SEMICONDUCTOR KTC2983D/L
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
FEATURES A I
High Transition Frequency : fT=100MHz(Typ.). C J
DIM MILLIMETERS
Complementary to KTA1225D/L.
D
A _
6.60 + 0.2
B _
6.10 + 0.2
C _
5.0 + 0.2
D _
1.10 + 0.2
B
E _
2.70 + 0.2
F _
2.30 + 0.1
H 1.00 MAX
M
Q
K
_
MAXIMUM RATING (Ta=25 )
E
I 2.30 + 0.2
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
CHARACTERISTIC SYMBOL RATING UNIT L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
_
Collector-Base Voltage VCBO 160 V 1 2 3
O 0.90 + 0.1
_
P 1.00 + 0.10
Q 0.95 MAX
Collector-Emitter Voltage VCEO 160 V
1. BASE
Emitter-Base Voltage VEBO 5 V 2. COLLECTOR
3. EMITTER
Collector Current IC 1.5 A
Base Current IB 1.0 A
DPAK
Collector Power Ta=25 1.0
PC W
Dissipation Tc=25 10
Junction Temperature Tj 150
A I
C J
Storage Temperature Range Tstg -55 150
D
DIM MILLIMETERS
B
A _
6.60 + 0.2
B _
6.10 + 0.2
_ 0.2
5.0 +
Q
C
K _
D 1.10 + 0.2
H P
E _
9.50 + 0.6
G _
E
F 2.30 + 0.1
G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _ 0.2
K 2.0 +
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=160V, IE=0 - - 1.0 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1.0 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 160 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5.0 - - V
DC Current Gain hFE(Note) VCE=5V, IC=100mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 1.5 V
Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 V
Transition Frequency fT VCE=10V, IC=100mA - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 25 - pF
Note : hFE Classification O:70~140, Y:120~240
2003. 3. 27 Revision No : 3 1/3
KTC2983D/L
I C - VCE hFE - I C
1.0 300
A A COMMON
8m Tc=100 C
COLLECTOR CURRENT I C (A)
m
mA
12 6mA EMITTER
20
DC CURRENT GAIN h FE
0.8 Tc=25 C Tc=25 C
100
0.6 4mA Tc=-25 C
50
0.4
I B =2mA
30
COMMON EMITTER
0.2
VCE =5V
0mA
0 10
0 2 4 6 8 10 12 14 16 0.003 0.01 0.03 0.1 0.3 1 3
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A)
V CE(sat) - I C I C - VBE
1
COLLECTOR-EMITTER SATURATION
1.0
COMMON EMITTER COMMON
COLLECTOR CURRENT I C (A)
I C /I B =10 EMITTER
0.5 0.8
VOLTAGE VCE(sat) (V)
VCE =5V
0.3
0.6
Tc=100 C
Tc=-25 C
Tc=25 C
C
100
Tc= Tc=25 C
0.4
Tc=-25 C
0.1
0.2
0.05
0.03 0
0.003 0.01 0.03 0.1 0.3 1 3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE VBE (V)
f T - IC Pc - Ta
COLLECTOR POWER DISSIPAZTION PC (W)
300 30
TRANSITION FREQUENCY f T (MHz)
1 Tc=25 C
25 2 Ta=25 C
100 20
50 15
1
30 10
COMMON EMITTER
VCE =10V
5 2
Tc=25 C
0 0
0.005 0.01 0.03 0.1 0.3 1 0 20 40 60 80 100 120 140 160 180
COLLECTOR CURRENT I C (A) AMBIENT TEMPERATURE Ta ( C)
2003. 3. 27 Revision No : 3 2/3
KTC2983D/L
SAFE OPERATING AREA
5
I C MAX(PULSED) *
3
I C MAX
COLLECTOR CURRENT I C (A)
(CONTINUOUS)
1.5
1
DC
1m *
0.5 OP 10
s*
ms
Tc ER
10
=2 AT
0m
0.3 5 I
C ON
s*
0.1
* SINGLE NONREPETITIVE
PULSE Tc=25 C
0.05 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
0.02
5 10 30 50 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 3. 27 Revision No : 3 3/3
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