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SEMICONDUCTOR KTC2020D/L
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
DPAK FOR SURFACE MOUNT APPLICATIONS.
A I
C J
FEATURES
DIM MILLIMETERS
D
Low Collector Saturation Voltage A _
6.60 + 0.2
_
B 6.10 + 0.2
_ 0.2
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. C 5.0 +
_
B
D 1.10 + 0.2
_
Straight Lead (IPAK, "L" Suffix) E
F
2.70 + 0.2
_
2.30 + 0.1
M
H 1.00 MAX
Q
Complementary to KTA1040D/L.
K
E
I _
2.30 + 0.2
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
O _
0.90 + 0.1
1 2 3 _
P 1.00 + 0.10
Q 0.95 MAX
MAXIMUM RATING (Ta=25 )
1. BASE
CHARACTERISTIC SYMBOL RATING UNIT 2. COLLECTOR
3. EMITTER
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
DPAK
Emitter-Base Voltage VEBO 7 V
Collector Current IC 3 A
Base Current IB 0.5 A A
C
I
J
D
Collector Power Ta=25 1.0
PC W
Dissipation
B
Tc=25 20 DIM
A
MILLIMETERS
_
6.60 + 0.2
B _
6.10 + 0.2
Junction Temperature Tj 150 _ 0.2
Q
5.0 +
K
C
D _
1.10 + 0.2
H P
E _
9.50 + 0.6
Storage Temperature Range Tstg -55 150
E
G F _
2.30 + 0.1
G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _ 0.2
K 2.0 +
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 A
Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 60 - - V
DC Current Gain hFE (Note) VCE=5V, IC=0.5A 100 - 300 -
Collector Emitter Saturation Voltage VCE(sat) IC=2A, IB=0.2A - 0.5 1.0 V
Base-Emitter Voltage VBE VCE=5V, IC=0.5A - 0.7 1.0 V
Transition Frequency fT VCE=5V, IC=0.5A - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 35 - pF
Turn-on Time ton - 0.65 -
Switching Time Storage Time tstg - 1.3 - S
Fall Time tf - 0.65 -
Note : hFE Classification Y:100~200, GR:150~300.
2003. 3. 27 Revision No : 5 1/2
KTC2020D/L
2003. 3. 27 Revision No : 5 2/2
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