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SEMICONDUCTOR KTC3531T
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
E
FEATURES K B
DIM MILLIMETERS
Low Saturation Voltage A _
2.9 + 0.2
: VCE(sat)=0.3V(Max.) at IC=0.5A. B 1.6+0.2/-0.1
C _
0.70 + 0.05
2
G
Complementary to KTA1531T. 3
D _
0.4 + 0.1
D
A
F
E 2.8+0.2/-0.3
F _
1.9 + 0.2
G
1
G 0.95
H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
MAXIMUM RATING (Ta=25 ) K 0.60
C
L
L 0.55
CHARACTERISTIC SYMBOL RATING UNIT
I
H
Collector-Base Voltage VCBO 30 V J J
Collector-Emitter Voltage VCEO 20 V
1. EMITTER
Emitter-Base Voltage VEBO 5 V 2. BASE
3. COLLECTOR
Collector Current IC 1 A
Collector Power Dissipation PC * 0.9 W
Junction Temperature Tj 150
TSM
Storage Temperature Range Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )
Marking
h FE Rank Lot No.
Type Name
HA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
hFE(1) (Note) VCE=2V, IC=50mA 120 - 400
DC Current Gain
hFE(2) VCE=2V, IC=1A(Pulse) 30 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - 0.1 0.3 V
Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA - 0.85 1.2 V
Transition Frequency fT VCE=10V, IC=50mA - 180 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 15 - pF
Note : hFE Classification Y:120 240, GR(G):200 400
2001. 6. 23 Revision No : 0 1/2
KTC3531T
I C - VCE I C - VCE
800 1000
I B =10mA IB =30mA
COLLECTOR CURRENT I C (mA)
IB =20mA
COLLECTOR CURRENT I C (mA)
A
I B =8mA
50m
IB =15mA
I B =6mA 800
IB =
600 IB =10mA
IB =8mA
I B =4mA 600
400
400 IB =5mA
I B =2mA IB =3mA
200
I B =1mA 200
I B =1mA
I B =0mA I B =0mA
0 0
0 1 2 3 4 5 6 7 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE V CE (V)
I C - VBE VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
1.4 2.0
VCE =2V I C /I B=10
COLLECTOR CURRENT I C (A)
1.2 1.0
VOLTAGE VCE (V)
0.5
1.0
0.3
0.8
0.6 0.1
0.05
0.4
0.03
0.2
0 0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 30 100 300 1k 3k 10k
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA)
fT - IC hFE - I C
TRANSITION FREQUENCY f T (MHz)
2K 500
VCE =10V VCE =2V
300
1K
DC CURRENT GAIN h FE
500 100
300 50
30
100
10
50
5
30 3
10 1
1 3 10 30 100 300 1k 1 3 10 30 100 300 1k 3k 10k
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2001. 6. 23 Revision No : 0 2/2
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