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SEMICONDUCTOR KTC3532T
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
E
FEATURES K B
DIM MILLIMETERS
Adoption of MBIT Processes. A _
2.9 + 0.2
Large Current Capacitance. B 1.6+0.2/-0.1
C _
0.70 + 0.05
2
Low Collector-to-Emitter Saturation Voltage.
G
3 _
D 0.4 + 0.1
D
A
E 2.8+0.2/-0.3
F
High-Speed Switching. F _
1.9 + 0.2
1
G
Ultrasmall Package Facilitates Miniaturization in end Products. G 0.95
H _
0.16 + 0.05
High Allowable Power Dissipation. I 0.00-0.10
J 0.25+0.25/-0.15
Complementary to KTA1532T K 0.60
C
L 0.55
L
H
I
J J
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT 1. EMITTER
2. BASE
Collector-Base Voltage VCBO 20 V 3. COLLECTOR
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5 V
DC IC 1.5 A TSM
Collector Current
Pulse ICP 3 A
Base Current IB 300 mA
Marking
Collector Power Dissipation PC * 0.9 W Lot No.
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Type Name
HB
* Package mounted on a ceramic board (600 0.8 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=12V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 20 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 20 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=750mA, IB=15mA - 130 200 mV
Base-Emitter Saturation Voltage VBE(sat) IC=750mA, IB=15mA - 0.85 1.2 V
DC Current Gain hFE VCE=2V, IC=100mA 200 - 560
Transition Frequency fT VCE=2V, IC=300mA - 210 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 20 - pF
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