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SEMICONDUCTOR KTC3544S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
E
Adoption of MBIT Processes. L B L
DIM MILLIMETERS
Large Current Capacitance. _
A 2.93 + 0.20
Low Collector-to-Emitter Saturation Voltage. B 1.30+0.20/-0.15
C 1.30 MAX
D
High Speed Switching. 2 3 D 0.40+0.15/-0.05
A
G
E 2.40+0.30/-0.20
Ultrasmall Package facilitates miniaturization in end products.
H
1 G 1.90
H 0.95
Complementary to KTA1544S. J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
MAXIMUM RATING (Ta=25 )
N
C
P 7
J
Q Max 0.1.
CHARACTERISTIC SYMBOL RATING UNIT
K
M
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 6 V
DC IC 2 SOT-23
Collector Current A
Pulse ICP 4
Base Current IB 400 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=20V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=3V, IC=0 - - 0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 30 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=75mA - 180 400 mV
Base-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=75mA - 0.85 1.2 V
DC Current Gain hFE VCE=2V, IC=100mA 200 - 560
Transition Frequency fT VCE=10V, IC=50mA - 150 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 19 - pF
Turn-On Time ton - 60 -
Switching tstg
Storage Time - 500 - nS
Time
Fall Time tf - 25 -
2011. 5. 25 Revision No : 0 1/2
KTC3544S
2011. 5. 25 Revision No : 0 2/2
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