Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC ktc3552t
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SEMICONDUCTOR KTC3552T
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
E
FEATURES K B
DIM MILLIMETERS
Adoption of FBET, MBIT Processes. A _
2.9 + 0.2
High Current Capacitance. B 1.6+0.2/-0.1
C _
0.70 + 0.05
2
G
Low Collector-to-Emitter Saturation Voltage. 3 _
D 0.4 + 0.1
D
A
E 2.8+0.2/-0.3
F
High-Speed Switching. F _
1.9 + 0.2
1
G
Ultrasmall Package Facilitates Miniaturization in end Products. G 0.95
H _
0.16 + 0.05
High Allowable Power Dissipation. I 0.00-0.10
J 0.25+0.25/-0.15
Complementary to KTA1552T. K 0.60
C
L 0.55
L
H
I
MAXIMUM RATING (Ta=25 ) J J
CHARACTERISTIC SYMBOL RATING UNIT
VCBO 1. EMITTER
Collector-Base Voltage 80 V
2. BASE
VCES 80 3. COLLECTOR
Collector-Emitter Voltage V
VCEO 50
Emitter-Base Voltage VEBO 6 V
DC IC 3
Collector Current A TSM
Pulse ICP 6
Base Current IB 600 mA
Collector Power Dissipation PC * 0.9 W
Marking
Lot No.
Junction Temperature Tj 150
HL
Storage Temperature Range Tstg -55 150 Type Name
* Package mounted on a ceramic board (600 0.8 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 80 - - V
V(BR)CES IC=100 A, VBE=0 80 - - V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=1mA, IB=0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6 - - V
VCE(sat)1 IC=1A, IB=50mA - 80 120 mV
Collector-Emitter Saturation Voltage
VCE(sat)2 IC=2A, IB=100mA - 140 210 mV
Base-Emitter Saturation Voltage VBE(sat) IC=2A, IB=100mA - 0.88 1.2 V
DC Current Gain hFE VCE=2V, IC=100mA 200 - 560
Transition Frequency fT VCE=10V, IC=500mA - 380 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 13 - pF
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