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SEMICONDUCTOR KTC3631D/L
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE SWITCHING.
FEATURES A I
C J
Low Collector Saturation Voltage
DIM MILLIMETERS
: VCE(sat)=0.5V(Max.) at (IC=0.5A).
D
A _
6.60 + 0.2
B _
6.10 + 0.2
High Switching Speed Typically. C _ 0.2
5.0 +
_
D 1.10 + 0.2
B
_
: tf 0.4 S at IC=1A. E
F
2.70 + 0.2
_
2.30 + 0.1
H 1.00 MAX
Complementary to KTA1862D.
M
Q
K
_
E
I 2.30 + 0.2
O
J _
0.5 + 0.1
Wide Safe Operating Area (SOA) H P K _
2.00 + 0.20
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
O _
0.90 + 0.1
1 2 3 _
P 1.00 + 0.10
Q 0.95 MAX
1. BASE
MAXIMUM RATING (Ta=25 ) 2. COLLECTOR
3. EMITTER
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 400 V
DPAK
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 7 V
DC 2.0 A
C
I
Collector Current IC A J
Pulse 4.0
D
Ta=25 1.0 DIM MILLIMETERS
B
Collector Power A _
6.60 + 0.2
PC W B _
6.10 + 0.2
Dissipation Tc=25 10 _
5.0 + 0.2
Q
C
K
D _
1.10 + 0.2
H P
E _
9.50 + 0.6
Junction Temperature Tj 150 G _
E
F 2.30 + 0.1
G _
0.76 + 0.1
Storage Temperature Range Tstg -55 150 H
I
1.0 MAX
_
2.30 + 0.2
J _
0.5 + 0.1
F F L _
K 2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=400V, IE=0 - - 1.0 A
Emitter Cut-off Current IEBO VEB=5.0V, IC=0 - - 1.0 A
hFE(1) (Note) VCE=5.0V, IC=100mA 56 100 180
DC Current Gain
hFE(2) VCE=5.0V, IC=500mA 6 - -
Collector Saturation Voltage VCE(sat) IC=500mA, IB=100mA - 0.3 0.5 V
Base Saturation Voltage VBE(sat) IC=500mA, IB=100mA - - 1.2 V
Transition Frequency fT VCE=10V, IE=-100mA, f=5MHz - 18 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 30 - pF
OUTPUT
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