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SEMICONDUCTOR KTC3640V
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
VHF/UHF/WIDE BAND AMPLIFIER APPLICATON.
E
FEATURES B
Low Noise Figure, High Gain.
NF=1.4dB, S21e 2=9.0dB(2GHz)
2 DIM MILLIMETERS
A _
1.2 +0.05
D
G
A
B _
0.8 +0.05
H
1 3 _
C 0.5 + 0.05
K
D _
0.3 + 0.05
E _
1.2 + 0.05
G _
0.8 + 0.05
H 0.40
MAXIMUM RATING (Ta=25 ) P P
J _
0.12 + 0.05
K _
0.2 + 0.05
CHARACTERISTIC SYMBOL RATING UNIT P 5
C
Collector-Base Voltage VCBO 5 V
J
Collector-Emitter Voltage VCEO 3 V
1. EMITTER
Emitter-Base Voltage VEBO 2 V 2. BASE
3. COLLECTOR
Collector Current IC 30 mA
Collector Power Dissipation PC 90 mW
Junction Temperature Tj 150 VSM
Storage Temperature Range Tstg -55 150
Marking
Type Name
hFE Rank
C
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=5V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=1V, IC=0 - - 100 nA
DC Current Gain hFE VCE=2V, IC=20mA (Note1) 70 - 130
Reverse Transfer Capacitance Cre VCB=2V, IE=0, f=1MHz (Note2) - 0.4 0.8 pF
fT (1) VCE=2V, IC=20mA, f=2GHz 9 14 -
Transition Frequency GHz
fT (2) VCE=1V, IC=10mA, f=2GHz 7 12 -
|S21e|2 (1) VCE=2V, IC=20mA, f=2GHz 8.5 10 -
Insertion Gain dB
2
|S21e| (2) VCE=1V, IC=10mA, f=2GHz 6.0 9.0 -
NF (1) VCE=2V, IC=3mA, f=2GHz - 1.4 2.0
Noise Figure dB
NF (2) VCE=1V, IC=3mA, f=2GHz - 1.4 2.0
Note 1) hFE Classification O1(1):70~100, O2(2):90~130.
2) Cre is measured by 3 terminal method with capacitance bridge.
3) This device electrostatic sensitivity. Please handle with caution.
2005. 12. 2 Revision No : 0 1/7
KTC3640V
IC - VCE hFE - IC
25
IC (mA)
500
Ta=25 C Ta=25 C
DC CURRENT GAIN hFE
20
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