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SEMICONDUCTOR KTC3770T
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
E
FEATURES K B
DIM MILLIMETERS
Low Noise Figure, High Gain. A _
2.9 + 0.2
NF=1.1dB, |S21e|2=11dB (f=1GHz). B 1.6+0.2/-0.1
C _
0.70 + 0.05
2
G
3 _
D 0.4 + 0.1
D
A
F
E 2.8+0.2/-0.3
F _
1.9 + 0.2
G
1
G 0.95
H _
0.16 + 0.05
MAXIMUM RATING (Ta=25 ) I 0.00-0.10
J 0.25+0.25/-0.15
CHARACTERISTIC SYMBOL RATING UNIT K 0.60
C
L
L 0.55
Collector-Base Voltage VCBO 20 V I
H
J J
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 3 V 1. EMITTER
2. BASE
Collector Current IC 100 mA 3. COLLECTOR
Collector Power Dissipation PC * 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TSM
2
* Package mounted on a ceramic board (600 0.8 )
Marking
h FE Rank Lot No.
Type Name
R
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=10V, IE=0 - - 1 A
Emitter Cut-off Current IEBO VEB=1V, IC=0 - - 1 A
DC Current Gain hFE (Note1) VCE=10V, IC=20mA 50 - 250
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 1.0 pF
Reverse Transfer Capacitance Cre (Note2) - 0.65 1.15 pF
Transition Frequency fT VCE=10V, IC=20mA 5 7 - GHz
2
Insertion Gain |S21e| VCE=10V, IC=20mA, f=1GHz 7.5 11.5 - dB
Noise Figure NF VCE=10V, IC=7mA, f=1GHz - 1.1 2 dB
Note 1 : hFE Classification A:50~100, B:80~160, C:125~250.
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.
2005. 3. 22 Revision No : 0 1/5
KTC3770T
TYPICAL CHARACTERISTICS (Ta=25 C)
Pc - Ta C ob , C re - VCB
REVERSE TRANSFER CAPACITANCE C re (pF)
COLLECTOR POWER DISSIPATION PC (W)
1.0 5
OUTPUT CAPACITANCE C (pF)
MOUNTED ON A f=1MHz
3 Ta=25 C
ob
0.8 CERAMIC BOARD
(600mm2 0.8mm)
0.6 C ob
1
0.4 0.5 C re
0.3
0.2
0 0.1
0 20 40 60 80 120 140 160 0.1 0.3 0.5 1 3 5 10
AMBIENT TEMPERATURE Ta ( C) COLLECTOR-BASE VOLTAGE VCB (V)
2
h FE - I C S 2le - IC
500 15
(dB)
VCE =10V
300
DC CURRENT GAIN h FE
2
INSERTION GAIN S 2le
10
100
50
5
30
VCE =10V
f=1.0GHz
10 0
0.5 1 3 10 30 100 1 3 5 10 30 50 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2
f T - IC S 2le - f
10 30
TRANSITION FREQUENCY f T (GHz)
VCE =10V VCE =10V
(dB)
I C =20mA
2
INSERTION GAIN S 2le
5
20
2
S 2le
3
10
1 0
1 3 5 10 30 50 100 0.1 0.3 0.5 1 3
COLLECTOR CURRENT I C (mA) FREQUENCY f (GHz)
2005. 3. 22 Revision No : 0 2/5
KTC3770T
2
NF - I C S 2le - VCE
5 15
VCE =10V
(dB)
f=1.0GHz
4 12
NOISE FIGURE NF (dB)
2
INSERTION GAIN S 2le
3 9
2 6
1 3
f=1.0GHz
I C =20mA
0 0
0.5 1 3 10 30 100 0 2 4 6 8 10
COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTGE VCE (V)
S-PARAMETER
(VCE=10V, IC=5mA, ZO=50 )
f (MHz) |S11| S11 |S21| S21 |S12| S12 |S22| S22
200 0.651 -69.3 10.616 129.3 0.051 59.2 0.735 -28.1
400 0.467 -113.3 6.856 104.4 0.071 54.4 0.550 -34.1
600 0.391 -139.3 4.852 90.9 0.086 56.0 0.468 -33.9
800 0.360 -159.2 3.802 81.2 0.101 59.1 0.426 -33.6
1000 0.360 -176.9 3.098 72.9 0.118 61.0 0.397 -35.7
1200 0.361 172.7 2.646 67.3 0.137 63.5 0.373 -38.3
1400 0.381 160.3 2.298 59.3 0.157 63.3 0.360 -43.0
1600 0.398 152.2 2.071 55.2 0.180 64.1 0.337 -45.9
1800 0.423 143.3 1.836 49.0 0.203 63.7 0.320 -52.3
2000 0.445 137.6 1.689 46.2 0.220 64.7 0.302 -52.2
(VCE=10V, IC=20mA, ZO=50 )
f (MHz) |S11| S11 |S21| S21 |S12| S12 |S22| S22
200 0.339 -107.0 16.516 108.7 0.035 66.1 0.459 -36.6
400 0.258 -147.3 8.928 92.1 0.060 71.0 0.343 -32.9
600 0.243 -167.7 6.022 83.0 0.085 71.9 0.305 -29.9
800 0.242 177.0 4.633 76.2 0.109 72.2 0.284 -29.4
1000 0.260 164.5 3.744 69.9 0.136 70.4 0.266 -31.7
1200 0.269 157.6 3.193 65.7 0.160 69.9 0.246 -35.0
1400 0.294 148.7 2.750 58.8 0.187 66.7 0.233 -40.4
1600 0.314 143.1 2.479 55.5 0.212 65.2 0.208 -43.6
1800 0.343 136.5 2.185 50.1 0.238 62.4 0.190 -50.5
2000 0.367 131.4 2.016 47.8 0.254 61.6 0.173 -48.3
2005. 3. 22 Revision No : 0 3/5
KTC3770T
S11e S12e
VCE =10V VCE =10V
I C =5mA I C =5mA
Ta=25 C Ta=25 C
(UNIT : ) j50 90
10
120 60
j25 j100 8
f=0.2GHz
6
j150 150 1.0 30
4
2.0 0.8
j10 j250
1.6 1.2
2
1.6
1.2 2.0
10 25 50 100 250
0 _
+ 180 0
10 8 6 4 2 0
0.8
-j10 -j250
0.4
-j150 -150 -30
f=0.2GHz
-j25
-j100
-120 -60
-j50 -90
S21e S22e
VCE =10V VCE =10V
I C =5mA I C =5mA
90 j50
Ta=25 C Ta=25 C
0.25
120 60 (UNIT : )
2.0
0.20 j25 j100
0.15 1.6
150 30 j150
1.2
0.10
0.8 j10 j250
0.05 0.4
f=0.2GHz
10 25 50 100 250
_
+ 180 0 0
0 0.05 0.10 0.15 0.20 0.25
0.8
1.6 0.4
1.2
-j10 2.0 f=0.2GHz -j250
-150 -30 -j150
-j25
-j100
-120 -60
-90 -j50
2005. 3. 22 Revision No : 0 4/5
KTC3770T
S12e
S11e VCE =10V
VCE =10V I C =20mA
I C =20mA Ta=25 C
j50 90
Ta=25 C 20
(UNIT : ) 120 60
j25 j100 f=0.2GHz 16
12
j150 150 30
8
0.4
j10 2.0 j250 0.8
1.6 1.2
2
1.2 1.6
2.0
10 25 50 100 250 _
0 + 180 0 0
10 8 6 4 2
0.4
-j10 f=0.2GHz -j250
-j150 -150 -30
-j25
-j100
-120 -60
-j50 -90
S21e S22e
VCE =10V VCE =10V
I C =20mA I C =20mA
90 j50
Ta=25 C 0.25 Ta=25 C
120 60 (UNIT : )
0.20 2.0 j25 j100
1.6
0.15 1.2
150 30 j150
0.10 0.8
j10 j250
0.05 0.4
f=0.2GHz
10 25 50 100 250
_
+ 180 0 0
0 0.05 0.10 0.15 0.20 0.25 1.2 0.8
1.6 0.4
2.0
f=0.2GHz
-j10 -j250
-150 -30 -j150
-j25
-j100
-120 -60
-90 -j50
2005. 3. 22 Revision No : 0 5/5
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